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參數(shù)資料
| 型號： | 2N6387 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 164K |
| 代理商： | 2N6387 |
2N6387 2N6388
4
Motorola Bipolar Power Transistor Device Data
V
CE
,COLLECT
OR–EMITTER
VOL
TAGE
(VOL
TS)
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7
1.0
2.0
10
500
300
h
FE
,DC
CURRENT
GAIN
TJ = 150°C
25
°C
– 55
°C
VCE = 4.0 V
200
7.0
20,000
5000
10,000
3000
2000
1000
3.0
5.0
Figure 9. Collector Saturation Region
3.0
IB, BASE CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
5.0 7.0
30
2.6
2.2
1.8
1.4
IC = 2.0 A
TJ = 25°C
4.0 A
6.0 A
1.0
0.7
20
10
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
0
– 1.0
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
,VOL
TAGE
(VOL
TS)
Figure 10. “On” Voltages
VCE(sat) @ IC/IB = 250
TJ = 25°C
VBE @ VCE = 4.0 V
0.1
0.2 0.3
0.5 0.7
1.0
2.0
10
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
V
,TEMPERA
TURE
COEFFICIENTS
(mV/
C)°
θ
*
θVC for VCE(sat)
– 55
°C to 25°C
25
°C to 150°C
*IC/IB ≤
hFE @ VCE + 4.0 V
3
– 55
°C to 25°C
25
°C to 150°C
θVB for VBE
– 2.0
– 3.0
– 4.0
– 5.0
+ 1.0
+ 2.0
+ 3.0
+ 4.0
+ 5.0
105
Figure 12. Collector Cut–Off Region
VBE, BASE–EMITTER VOLTAGE (VOLTS)
102
101
100
,COLLECT
OR
CURRENT
(
A)
I C
10– 1
VCE = 30 V
TJ = 150°C
100
°C
25
°C
REVERSE
FORWARD
103
104
+ 0.2 + 0.4
0
– 0.2
– 0.4
– 0.6
+ 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
Figure 13. Darlington Schematic
BASE
COLLECTOR
EMITTER
[ 8.0 k
[ 120
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6387_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Silicon Transistors |
| 2N6387G | 功能描述:達林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6388 | 功能描述:達林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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