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參數(shù)資料
| 型號(hào)： | 2N6387 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, CASE 221A-06, 3 PIN |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 164K |
| 代理商： | 2N6387 |
2N6387 2N6388
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
2N6387
2N6388
VCEO(sus)
60
80
—
Vdc
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
2N6387
(VCE = 80 Vdc, IB = 0)
2N6388
ICEO
—
1.0
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6387
(VCE – 80 Vdc, VEB(off) = 1.5 Vdc)
2N6388
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6387
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
2N6388
ICEX
—
300
3.0
Adc
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
—
5.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
(IC = 1 0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
hFE
1000
100
20,000
—
—
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.01 Adc)
2N6387, 2N6388
(IC = 10 Adc, IB = 0.1 Adc)
2N6387, 2N6388
VCE(sat)
—
2.0
3.0
Vdc
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
(IC = 10 Adc, VCE = 3.0 Vdc)
2N6387, 2N6388
VBE(on)
—
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
|hfe|
20
—
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
200
pF
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
hfe
1000
—
—
* Indicates JEDEC Registered Data
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
Figure 2. Switching Times Test Circuit
7.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMPS)
t,
TIME
(
s)
5.0
0.7
0.3
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
tf
0.07
1.0
5.0
ts
tr
0.1
1.0
3.0
0.5
2.0
0
VCC
+ 30 V
SCOPE
TUT
– 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPES, e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V1
APPROX
+ 12 V
V2
APPROX
– 8 V
[ 8.0 k [ 120
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
RB
td
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6387/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Plastic Medium-Power Transistors |
| 2N6387_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium−Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, 60 − 80 VOLTS |
| 2N6387_07 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Plastic Medium-Power Silicon Transistors |
| 2N6387G | 功能描述:達(dá)林頓晶體管 10A 60V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2N6388 | 功能描述:達(dá)林頓晶體管 NPN Power Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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