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參數(shù)資料
| 型號(hào)： | 2N6339 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | 2N6339 |
2N6338 2N6339 2N6340 2N6341
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
2N6338
(IC = 50 mAdc, IB = 0)
2N6339
2N6340
2N6341
VCEO(sus)
100
120
140
150
—
Vdc
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
2N6338
(VCE = 60 Vdc, IB = 0)
2N6339
(VCE = 70 Vdc, IB = 0)
2N6340
(VCE = 75 Vdc, IB = 0)
2N6341
ICEO
—
50
Adc
Collector Cutoff Current
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc)
(VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C)
ICEX
—
10
1.0
Adc
mAdc
Collector Cutoff Current (VCB = Rated VCB, IE = 0)
ICBO
—
10
Adc
Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0)
IEBO
—
100
Adc
ON CHARACTERISTICS (1)
DC Current Gain)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
hFE
50
30
12
—
120
—
—
Collector Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VCE(sat)
—
1.0
1.8
Vdc
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
—
1.8
2.5
Vdc
Base–Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc)
VBE(on)
—
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
fT
40
—
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
—
300
pF
SWITCHING CHARACTERISTICS
Rise Time (VCC ≈ 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc)
tr
—
0.3
s
Storage Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
ts
—
1.0
s
Fall Time (VCC ≈ 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc)
tf
—
0.25
s
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
(2) fT = |hfe| ftest.
Figure 2. Switching Time Test Circuit
1000
0.3
Figure 3. Turn–On Time
IC, COLLECTOR CURRENT (AMP)
t,
TIME
(ns)
500
100
70
50
10
0.5 0.7
2.0
3.0
7.0
30
+ 11 V
0
VCC
SCOPE
RB
10 OHMS
– 5.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
8.0 OHMS
20
30
5.0
20
10
s
– 9.0 V
700
200
300
1.0
10
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
+ 80 V
1N4933
td @ VBE(off) = 6.0 V
VCC = 80 V
IC/IB = 10
TJ = 25°C
tr
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6338 | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6341XR1 | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6341X | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6351 | 5000 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-33 |
| 2N6352 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6339ACECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 25A I(C) | TO-204AA |
| 2N6339X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| 2N634 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 300MA I(C) | TO-9 |
| 2N6340 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 140V 30A 3PIN TO-3 - Bulk 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW 制造商:NTE Electronics 功能描述:T-NPN SI-PWR AMP SW ;ROHS COMPLIANT: YES |
| 2N6340X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
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