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參數(shù)資料
| 型號(hào)： | 2N6338 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | 2N6338 |
1
Motorola Bipolar Power Transistor Device Data
High-Power NPN Silicon
Transistors
. . . designed for use in industrial–military power amplifier and switching circuit
applications.
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min) — 2N6338
VCEO(sus) = 120 Vdc (Min) — 2N6339
VCEO(sus) = 140 Vdc (Min) — 2N6340
VCEO(sus) = 150 Vdc (Min) — 2N6341
High DC Current Gain —
hFE = 30 – 120 @ IC = 10 Adc
hFE = 12 (Min) @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 s (Max)
ts = 1.0 s (Max)
tf = 0.25 s (Max)
Complement to 2N6436–38
*MAXIMUM RATINGS
Rating
Symbol
2N6338
2N6339
2N6340
2N6341
Unit
Collector–Base Voltage
VCB
120
140
160
180
Vdc
Collector–Emitter Voltage
VCEO
100
120
140
150
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current
Continuous
Peak
IC
25
50
Adc
Base Current
IB
10
Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25
_C
PD
200
1.14
Watts
W/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to + 200
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
0.875
_C/W
* Indicates JEDEC Registered Data.
200
75
50
25
0
25
50
75
100
125
150
175
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
P
D
,POWER
DISSIP
A
TION
(W
A
TTS)
175
150
125
100
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6338/D
Motorola, Inc. 1995
2N6338
2N6339
2N6340
2N6341
*Motorola Preferred Device
25 AMPERE
POWER TRANSISTORS
NPN SILICON
100, 120, 140, 150 VOLTS
200 WATTS
*
CASE 1–07
TO–204AA
(TO–3)
REV 7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N6341XR1 | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6341X | 25 A, 135 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 2N6351 | 5000 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-33 |
| 2N6352 | 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 2N6298 | 8 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-213 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N6338/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High-Power NPN Silicon Transistors |
| 2N6338G | 功能描述:兩極晶體管 - BJT 25A 100V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N6338X | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-204AA |
| 2N6339 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 30A 3PIN TO-3 - Bulk |
| 2N6339ACECC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 25A I(C) | TO-204AA |
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