參數(shù)資料
型號： 2N5551CSM-QR-EB
廠商： SEMELAB LTD
元件分類： 小信號晶體管
英文描述： 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, CERAMIC, LCC-3
文件頁數(shù)： 1/1頁
文件大?。?/td> 10K
代理商： 2N5551CSM-QR-EB
2N5551CSM
Bipolar NPN Device.
V
CEO =
160V
I
C = 0.6A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO*
160
V
I
C(CONT)
0.6
A
h
FE
@ 5.0/10m (V
CE / IC)
80
-
f
t
100M
Hz
P
D
0.35
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
2-Aug-02
Bipolar NPN Device in a
Hermetically sealed LCC1
Ceramic Surface Mount
Package for High
Reliability Applications
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Dimensions in mm (inches).
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54
±
0.
13
(0
.10
±
0.
005)
0.
76
±
0.
1
5
(0
.03
±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
A =
3
PINOUTS
1 – Base
2 – Emitter
3 - Collector
相關(guān)PDF資料
PDF描述
2N5551CSMG4 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2N5551-C-T92-B 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR
2N5551-C-T92-K 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR
2N5551-C-T92-R 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR
2N5551CTA 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2N5551CYTA 功能描述:兩極晶體管 - BJT NPN 160V 600mA HFE/250 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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