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參數(shù)資料
| 型號： | 2N5551CSMG4 |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC1-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 31K |
| 代理商： | 2N5551CSMG4 |
2N5551CSM
Document Number 6528
Issue 1
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
HIGH VOLTAGE NPN
SWITCHING TRANSISTOR IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
FEATURES
SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
HERMETIC CERAMIC SURFACE MOUNT
PACKAGE (SOT23 COMPATIBLE)
CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount 2N5551
for high reliability / space applications
requiring small size and low weight devices.
VCBO
Collector – Base Voltage
VCEO
Collector – Emitter Voltage
VEBO
Emitter – Base Voltage
IC
Collector Current
PD
Total Device Dissipation
@ TA =25°C
Derate >25
°C
TSTG , TJ
Operating and Storage Temperature Range
180V
160V
6V
600mA
350mW
2.0°C/W
–55 to +150°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC
(LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter PAD 3 – Collector
21
0.51 ± 0.10
(0.02 ± 0.004)
0.31
(0.012)
1.91 ± 0.10
(0.075 ± 0.004)
3.05 ± 0.13
(0.12 ± 0.005)
2.
54
±
0.
13
(0
.10
±
0.
005)
0.
76
±
0.
1
5
(0
.03
±
0.
00
6)
1.02 ± 0.10
(0.04 ± 0.004)
1.40
(0.055)
max.
A
0.31
(0.012)
rad.
A =
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N5551G-B-T92-K | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5551G-C-T92-B | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5551G-C-T92-K | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2N5551G-B-AB3-R | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2N5551TPER1 | 600 mA, 160 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5551-C-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-C-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551-C-T92-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:HIGH VOLTAGE SWITCHING TRANSISTOR |
| 2N5551CTA | 功能描述:兩極晶體管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5551CYTA | 功能描述:兩極晶體管 - BJT NPN 160V 600mA HFE/250 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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