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參數(shù)資料
| 型號： | 2N5416S |
| 廠商： | SEMICOA CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 186K |
| 代理商： | 2N5416S |
Data Sheet No. 2N5416S
OFF Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
IC = 50 mA, IB = 5 mA, L = 25 mH, f = 30-60 Hz
Collector-Base Cutoff Current
VCB = 280 V
ICBO1
---
50
A
VCB = 350 V
ICBO2
---
500
A
VCB = 280 V, TA = +150
oC
ICBO3
---
1
mA
Emitter-Base Cutoff Current
VEB = 6 V
Collector-Emitter Cutoff Current
VCE = 250 V
ICEO1
---
50
A
VCE = 300 V
ICEO2
---
1
mA
Collector-Emitter Cutoff Current
VCE = 300 V, VBE = 1.5 V
nA
IEBO
---
20
Electrical Characteristics
TC = 25
oC unless otherwise specified
V(BR)CEO
200
---
V
ICEX
---
50
A
ON Characteristics
Symbol
Min
Max
Unit
Forward Current Transfer Ratio
IC = 50 mA, VCE = 10 V, pulsed
hFE1
30
120
---
IC = 1.0 mA, VCE = 1.0 V, pulsed
hFE2
15
---
IC = 10 mA, VCE = 10 V, TA = -55
oC, pulsed h
FE3
15
---
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 5 mA, pulsed
Base-Emitter Saturation Voltage
VCE = 10 V, IC = 50 mA, pulsed
VBE
---
1.5
V dc
VCE(sat)
---
2.0
V dc
Small Signal Characteristics
Symbol
Min
Max
Unit
Small Signal, Short Circuit
Forward Current Transfer Ratio
VCE = 10 V, IC = 10 mA, f = 5 MHz
Short-Circuit, Forward Current Transfer Ratio
VCE = 10 V, IC = 5 mA, f = < 1 kHz
Open Circuit Output Capacitance
VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz
Input Capacitance, Output Open Circuited
VEB = 5 V, IC = 0, 100 kHz < f < 1 MHz
---
hFE
55
---
|hFE|
3.0
15
---
COBO
---
15
pF
CIBO
---
75
pF
Pulse Response
Symbol
Min
Max
Unit
Turn on Time
VCC = 200 V, IC = 50 mA, IB1 = 5 mA
Turn off Time
VCC = 200 V, IC = 50 mA, IB1 = IB2 = 5 mA
toff
---
10
s
ton
---
1.0
s
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| 2N5416 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3440 | 1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N3439 | 1000 mA, 350 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5415 | 1000 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD |
| 2N5416 | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5416SJANTX | 制造商:n/a 功能描述:2N5416S DC85 N10D9H 制造商:Microsemi Corporation 功能描述: |
| 2N5416UA | 制造商:Microsemi Corporation 功能描述:Trans GP BJT PNP 300V 1A 4-Pin UA 制造商:Microsemi Corporation 功能描述:TRANS GP BJT PNP 300V 1A 4PIN UA - Bulk |
| 2N5416UA/TR | 功能描述:POWER BJT 制造商:microsemi corporation 系列:- 零件狀態(tài):在售 晶體管類型:PNP 電流 - 集電極（Ic）（最大值）:1A 電壓 - 集射極擊穿（最大值）:300V 不同?Ib，Ic 時的?Vce 飽和值（最大值）:2V @ 5mA，50mA 電流 - 集電極截止（最大值）:50μA 不同?Ic，Vce?時的 DC 電流增益（hFE）（最小值）:30 @ 50mA，10V 頻率 - 躍遷:- 工作溫度:-65°C ~ 200°C（TJ） 安裝類型:表面貼裝 封裝/外殼:4-SMD，無引線 供應商器件封裝:UA 標準包裝:100 |
| 2N5417 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 500MA I(C) | TO-39 |
| 2N5418 | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:SERIES 2N TRANSISTORS |
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