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參數(shù)資料
| 型號(hào)： | 2N5416CSM4-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC3-4 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 2N5416CSM4-JQR-B |
SILICON PLANAR
EPITAXIAL PNP TRANSISTOR
2N5415CSM4, 2N5416CSM4
Se
Semelab Limited
melab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9226
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ.
Max.
Units
IC = -10mA
2N5415
-200
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage
IC = -10mA
2N5416
-300
RBE = 50
V(BR)CER
(1)
Collector-Emitter
Breakdown Voltage
IC = -50mA
2N5416
-350
V
ICEO
(1)
Collector Cut-off Current
IB = 0
VCE = -150V
-50
VCB = -175V
2N5415
-50
ICBO
(1)
Collector-Base Cut-off
Current
VCB = -280V
2N5416
-50
VEB = -4V
2N5415
-20
IEBO
(1)
Emitter Cut-off Current
VEB = -6V
2N5416
-20
A
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -50mA
IB = -5mA
-0.5
VBE
(1)
Base-Emitter Voltage
IC = -50mA
VCE = -10V
-1.5
V
IC = -50mA
VCE = -10V
2N5415
30
150
IC = -50mA
hFE
(1)
DC Current Gain
VCE = -10V
2N5416
30
120
-
DYNAMIC CHARACTERISTICS
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
fT
Transition Frequency
IC = -10mA VCE = -10V f =5MHz
15
MHz
Cobo
Output Capacitance
VCB = -10V
IE = 0
f =1.0MHz
25
pF
hfe
Small Signal Current Gain
IC = -5mA
VCE = -10V f =1.0kHz
25
-
Notes
(1)
Pulse Width ≤ 300us, δ ≤ 2%
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