參數(shù)資料
型號(hào): 2N5197
廠商: Vishay Intertechnology,Inc.
英文描述: Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V,最大柵極工作電流-15pA的雙N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述: 單片雙N溝道場(chǎng)效應(yīng)(最小柵源擊穿電壓- 50V的最大柵極工作電流,15pA的雙?溝道結(jié)型場(chǎng)效應(yīng)管)
文件頁數(shù): 5/6頁
文件大小: 92K
代理商: 2N5197
2N5196/5197/5198/5199
Siliconix
P-37514—Rev. C, 25-Jul-94
5
Typical Characteristics (Cont’d)
0.01
0.1
1
10
1
0
–1.5
–1.0
–0.5
–2.0
–2.5
4
3
2
1
0
0.01
0.1
1
130
120
80
110
100
90
0.01
0.1
1
100
10
1
100
5
0.1
1
0.01
100
80
60
40
20
0
Transfer Characteristics
Gate-Source Differential Voltage
vs. Drain Current
Voltage Differential with Temperature
vs. Drain Current
Common Mode Rejection Ratio
vs. Drain Current
(
V
G
V
G
C
A
V
V
GS
– Gate-Source Voltage (V)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
I
D
– Drain Current (mA)
2N5196
T
A
= –55 C
125 C
V
GS(off)
= –2 V
V
DG
= 20 V
T
A
= 25 to 125 C
T
A
= –55 to 25 C
V
DG
= 20 V
T
A
= 25 C
5 – 10 V
V
GS(off)
= –3 V
I
D
Circuit Voltage Gain vs. Drain Current
2N5199
2N5196
2N5199
On-Resistance vs. Drain Current
I
D
– Drain Current (mA)
0.01
0.1
1
1 k
800
600
400
200
0
V
GS(off)
= –2 V
A
V
g
fs
R
L
R
L
g
os
1
R
L
10 V
I
D
Assume V
DD
= 15 V, V
DS
= 5 V
V
DS
= 20 V
V
GS(off)
= –2 V
V
GS(off)
= –3 V
25 C
V
(
)
t
V
G
V
G
r
D
)
V
GS1
V
GS2
V
DG
CMRR = 20 log
V
DG
= 10 – 20 V
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2N5198 Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V,最大柵極工作電流-15pA的雙N溝道結(jié)型場(chǎng)效應(yīng)管)
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2N5197-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5198 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5198-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5199 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5199-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時(shí)的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel