參數(shù)資料
型號(hào)： 2N5197
廠商： Vishay Intertechnology,Inc.
英文描述： Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場(chǎng)效應(yīng)管)
中文描述： 單片雙N溝道場(chǎng)效應(yīng)（最小柵源擊穿電壓- 50V的最大柵極工作電流，15pA的雙?溝道結(jié)型場(chǎng)效應(yīng)管）
文件頁數(shù)： 3/6頁
文件大?。?/td> 92K
代理商： 2N5197
2N5196/5197/5198/5199
Siliconix
P-37514—Rev. C, 25-Jul-94
3
Specifications
a
for 2N5198 and 2N5199
Limits
2N5198
2N5199
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–57
–50
–50
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 20 V, I
D
= 1 nA
–2
–0.7
–4
–0.7
–4
Saturation Drain Current
c
I
DSS
V
DS
= 20 V, V
GS
= 0 V
3
0.7
7
0.7
7
mA
Gate Reverse Current
I
GSS
V
GS
= –30 V, V
DS
= 0 V
–10
–25
–25
pA
T
A
= 150 C
–20
–50
–50
nA
Gate Operating Current
I
G
V
DG
= 20 V, I
D
= 200 A
–5
–15
–15
pA
T
A
=125 C
–0.8
–15
–15
nA
Gate-Source Voltage
V
GS
V
DG
= 20 V, I
D
= 200 A
–1.5
–0.2
–3.8
–0.2
–3.8
V
Dynamic
Common-Source
Forward Transconductance
g
fs
= 20 V V
= 0 V f = 1 kHz
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
2.5
1
4
1
4
mS
Common-Source
Output Conductance
g
os
2
50
50
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, I
D
= 200 A
f = 1 kHz
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
g
os
1
4
4
S
Common-Source Input Capaci-
tance
C
iss
= 20 V V
= 0 V f = 1 MHz
V
DS
= 20 V, V
GS
= 0 V, f = 1 MHz
3
6
6
pF
Common-Source
Reverse Transfer Capacitance
C
rss
1
2
2
Equivalent Input Noise Voltage
e
n
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
9
20
20
nV
√
Hz
Noise Figure
NF
V
DS
= 20 V, V
GS
= 0 V
f = 100 Hz, R
G
= 10 M
0.5
0.5
dB
Matching
Differential Gate-Source Voltage
V
DG
= 20 V, I
D
= 200 A
10
15
mV
Gate-Source Voltage Differential
Change with Temperature
V
DG
= 20 V, I
D
= 200 A
T
A
= –55 to 125 C
20
40
V/ C
Saturation Drain Current Ratio
V
DS
= 20 V, V
GS
= 0 V
0.97
0.95
1
0.95
1
Transconductance Ratio
V
DS
= 20 V, I
D
= 200 A
f = 1 kHz
0.97
0.95
1
0.95
1
Differential Output Conductance
0.2
1
1
S
Differential Gate Current
V
DG
= 20 V, I
D
= 200 A
T
A
= 125 C
0.1
5
5
nA
Common Mode Rejection Ratio
d
CMRR
V
DG
= 10 to 20 V, I
D
= 200 A
97
dB
Notes
a.
b.
c.
d.
T
A
= 25 C unless otherwise noted.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
Pulse test: PW
300 s duty cycle
3%.
This parameter not registered with JEDEC.
NQP
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參數(shù)描述
2N5197-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5198 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5198-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5199 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
2N5199-E3 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel
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