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參數(shù)資料
| 型號： | 2N5196 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Monolithic Dual N-Channel JFET(最小柵源擊穿電壓-50V，最大柵極工作電流-15pA的雙N溝道結(jié)型場效應(yīng)管) |
| 中文描述： | 單片雙N溝道場效應(yīng)（最小柵源擊穿電壓- 50V的最大柵極工作電流，15pA的雙?溝道結(jié)型場效應(yīng)管） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 92K |
| 代理商： | 2N5196 |
2N5196/5197/5198/5199
2
Siliconix
P-37514—Rev. C, 25-Jul-94
Specifications
a
for 2N5196 and 2N5197
Limits
2N5196
2N5197
Parameter
Symbol
Test Conditions
Typ
b
Min
Max
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
V
(BR)GSS
I
G
= –1 A, V
DS
= 0 V
–57
–50
–50
V
Gate-Source Cutoff Voltage
V
GS(off)
V
DS
= 20 V, I
D
= 1 nA
–2
–0.7
–4
–0.7
–4
Saturation Drain Current
c
I
DSS
V
DS
= 20 V, V
GS
= 0 V
3
0.7
7
0.7
7
mA
Gate Reverse Current
I
GSS
V
GS
= –30 V, V
DS
= 0 V
–10
–25
–25
pA
T
A
= 150 C
–20
–50
–50
nA
Gate Operating Current
I
G
V
DG
= 20 V, I
D
= 200 A
–5
–15
–15
pA
T
A
= 125 C
–0.8
–15
–15
nA
Gate-Source Voltage
V
GS
V
DG
= 20 V, I
D
= 200 A
–1.5
–0.2
–3.8
–0.2
–3.8
V
Dynamic
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, V
= 0 V
f = 1 kHz
2.5
1
4
1
4
mS
Common-Source
Output Conductance
g
os
GS
2
50
50
S
Common-Source
Forward Transconductance
g
fs
V
DS
= 20 V, I
D
= 200 A
f = 1 kHz
0.8
0.7
1.6
0.7
1.6
mS
Common-Source
Output Conductance
g
os
1
4
4
S
Common-Source
Input Capacitance
C
iss
V
DS
= 20 V, V
= 0 V
f = 1 MHz
3
6
6
pF
Common-Source
Reverse Transfer Capacitance
C
rss
GS
1
2
2
Equivalent Input Noise Voltage
e
n
V
DS
= 20 V, V
GS
= 0 V, f = 1 kHz
9
20
20
nV
√
Hz
Noise Figure
NF
V
DS
= 20 V, V
GS
= 0 V
f = 100 Hz, R
G
= 10 M
0.5
0.5
dB
Matching
Differential Gate-Source Voltage
V
DG
= 20 V, I
D
= 200 A
5
5
mV
Gate-Source Voltage Differential
Change with Temperature
V
DG
= 20 V, I
D
= 200 A
T
A
= –55 to 125 C
5
10
V/
C
Saturation Drain Current Ratio
V
DS
= 20 V, V
GS
= 0 V
0.98
0.95
1
0.95
1
Transconductance Ratio
V
DS
= 20 V, I
D
= 200 A
f = 1 kHz
0.99
0.97
1
0.97
1
Differential Output Conductance
0.1
1
1
S
Differential Gate Current
V
DG
= 20 V, I
D
= 200 A
T
A
= 125 C
0.1
5
5
nA
Common Mode Rejection Ratio
d
CMRR
V
DG
= 10 to 20 V, I
D
= 200 A
100
dB
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| 2N5196-2 | 制造商:Vishay Siliconix 功能描述:SS T092 GP XSTR PNP 100V -LEAD FREE - Bulk |
| 2N5196-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5197 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2N5197-E3 | 功能描述:JFET 50V 15pA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時(shí)的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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