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參數(shù)資料
| 型號(hào)： | 2N3904DCSM-JQR |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2, 6 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | 2N3904DCSM-JQR |
SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
Semelab Lim
Semelab Limited
ited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9009
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
Min.
Typ
Max.
Units
ICBO
Collector-Cut-Off Current
VCB = 30V
IE = 0
30
IEBO
Emitter Cut-Off Current
VEB = 3V
IC = 0
30
nA
V(BR)CBO
Collector-Base Breakdown
Voltage
IC = 10A
60
V(BR)CEO
(2)
Collector-Emitter
Breakdown Voltage
IC = 1.0mA
40
V(BR)EBO
Emitter-Base Breakdown
Voltage
IE = 10A
6
V
IC = 0.1mA
40
IC = 1.0mA
70
IC = 10mA
100
300
IC = 50mA
60
hFE
(2)
Forward-current transfer
ratio
IC = 100mA
VCE = 1.0V
30
IC = 10mA
IB = 1.0mA
0.65
0.85
VBE(sat)
(2)
Base-Emitter Saturation
Voltage
IC = 50mA
IB = 5mA
0.95
IC = 10mA
IB = 1.0mA
0.2
VCE(sat)
(2)
Collector-Emitter Saturation
Voltage
IC = 50mA
IB = 5mA
0.3
IB = 500mA
1.45
VBE(f)
(2)
Forward Base-Emitter
Voltage
IB = 200mA
TA = 100°C
2
V
DYNAMIC CHARACTERISTICS
IC = 10mA
VCE = 20V
fT
Transition Frequency
f = 100MHz
300
MHz
IC = 1.0mA
VCE = 10V
hfe
Small-Signal Current Gain
f = 1.0KHz
100
400
VCB = 5V
IE = 0
Cobo
Output Capacitance
f = 1.0MHz
4
VEB = 0.5V
IC = 0
Cibo
Input Capacitance
f = 1.0MHz
8
pF
IC = 100 A
VCE = 5V
RS = 1.0K
NF
(3)
Noise Figure
f = 10Hz To 15.7KHz
5
dB
td
Delay Time
VCC = 3V
VBE = 0.5V
35
tr
Rise Time
IC = 10mA
IB1 = 1.0mA
35
ts
Storage Time
VCC = 3V
IC = 10mA
200
tf
Fall Time
IB1 = IB2 = 1.0mA
50
ns
Notes
(2)
Pulse Width ≤ 300us, δ ≤ 2%
(3)
By design only, not a production test.
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