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參數(shù)資料
| 型號： | 2N3904DCSM-JQR-B |
| 廠商： | SEMELAB LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, MO-041BB |
| 封裝： | HERMETIC SEALED, CERAMIC, LCC2, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 107K |
| 代理商： | 2N3904DCSM-JQR-B |
SILICON EPITAXIAL
DUAL NPN TRANSISTORS
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 9009
Issue 1
Page 1 of 3
2N3904DCSM
Dual Silicon Planar NPN Transistors.
Hermetic Ceramic Surface Mount Package.
Designed For General Purpose and Switching Applications.
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (T
A = 25°C unless otherwise stated)
Each Side
Total Device
VCBO
Collector – Base Voltage
60V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC
Continuous Collector Current
200mA
PD
Total Power Dissipation at
TA = 25°C
500mW
600mW
(1)
Derate Above 25°C
2.86mW/°C
3.43mW/°C
TJ
Junction Temperature Range
-55 to +200°C
Tstg
Storage Temperature Range
-55 to +200°C
THERMAL PROPERTIES (Each Side)
Symbols
Parameters
Min.
Typ.
Max.
Units
RθJA
Thermal Resistance, Junction To Ambient
350
°C/W
Notes
(1)
Total device power dissipation limited by package.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N3904E | 制造商:KEC 制造商全稱:KEC(Korea Electronics) 功能描述:EPITAXIAL PLANAR NPN TRANSISTOR |
| 2N3904G | 功能描述:兩極晶體管 - BJT 200mA 40V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N3904G | 制造商:ON Semiconductor 功能描述:Bipolar Transistor |
| 2N3904G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
| 2N3904G-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN GENERAL PURPOSE AMPLIFIER |
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