參數(shù)資料
型號: 2N3904
廠商: GE Security, Inc.
英文描述: Small Signal Transistors (NPN)(應用于開關和放大器的小信號晶體管(NPN))
中文描述: 小信號晶體管(NPN)的(應用于開關和放大器的小信號晶體管(NPN)的)
文件頁數(shù): 2/3頁
文件大?。?/td> 112K
代理商: 2N3904
2N3904
ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
m
A, I
E
= 0
V
(BR)CBO
60
D
V
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA, I
B
= 0
V
(BR)CEO
40
D
V
Emitter-Base Breakdown Voltage
at I
E
= 10
m
A, I
C
= 0
V
(BR)EBO
6
D
V
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
V
CEsat
V
CEsat
D
D
0.2
0.3
V
V
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
V
BEsat
V
BEsat
D
D
0.85
0.95
V
V
Collector-Emitter Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
CEV
D
50
nA
Emitter-Base Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
I
EBV
D
50
nA
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
at V
CE
= 1 V, I
C
= 1 mA
at V
CE
= 1 V, I
C
= 10 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 100 mA
h
FE
h
FE
h
FE
h
FE
h
FE
40
70
100
60
30
D
D
D
D
D
D
D
300
D
D
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
ie
1
10
k
W
Voltage Feedback Ratio
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
h
re
0.5 á 10
D4
8 á 10
D4
D
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
f
T
300
D
MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz
C
CBO
D
4
pF
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz
C
EBO
D
8
pF
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