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參數(shù)資料
| 型號(hào)： | 2N3737UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 241K |
| 代理商： | 2N3737UB |
Copyright
2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N3737UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
CBO1
I
CBO2
I
CEX1
I
CEX2
I
EBO1
I
EBO2
I
C
= 10 mA
V
CB
= 75 Volts
V
CB
= 30 Volts
V
CE
= 30 Volts, V
EB
= 2 Volts
V
CE
= 30 Volts, V
EB
= 2 Volts,
T
A
= 150
°
C
V
EB
= 5 Volts
V
EB
= 4 Volts
40
Collector-Base Cutoff Current
10
250
μ
A
nA
nA
μ
A
μ
A
nA
Collector-Emitter Cutoff Current
200
250
10
100
Emitter-Base Cutoff Current
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
h
FE6
Test Conditions
I
C
= 10 mA, V
CE
= 1 Volts
I
C
= 150 mA, V
CE
= 1 Volts
I
C
= 500 mA, V
CE
= 1 Volts
I
C
= 1 A, V
CE
= 1.5 Volts
I
C
= 1.5 A, V
CE
= 5 Volts
I
C
= 500 mA, V
CE
= 1 Volts
T
A
= -55
°
C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 1 A, I
B
= 100 mA
Min
35
40
40
20
20
15
0.9
Typ
Max
140
80
0.8
1.0
1.2
1.4
0.2
0.3
0.5
0.9
Units
DC Current Gain
Base-Emitter Saturation Voltage
V
BEsat1
V
BEsat2
V
BEsat3
V
BEsat4
V
CEsat1
V
CEsat2
V
CEsat3
V
CEsat4
Volts
Collector-Emitter Saturation Voltage
Volts
Dynamic Characteristics
Parameter
Symbol
Test Conditions
V
CE
= 10 Volts, I
C
= 50 mA,
f = 100 MHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
EB
= 0.5 Volts, I
C
= 0 mA,
100 kHZ < f < 1 MHz
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|h
FE
|
2.5
6.0
Open Circuit Output Capacitance
C
OBO
9
pF
Open Circuit Input Capacitance
C
IBO
80
pF
Switching Characteristics
Delay Time
Rise Time
Saturated Turn-Off Time
t
d
t
r
V
BE
= 2 Volts, I
C
= 1 A,
I
B
= 100 mA
I
C
= 1 A, I
B1
=I
B2
=100 mA
8
40
60
ns
t
OFF
ns
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