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參數(shù)資料
| 型號(hào)： | 2N3737UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 241K |
| 代理商： | 2N3737UB |
Copyright
2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 2
2N3737UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3737UBJ)
JANTX level (2N3737UBJX)
JANTXV level (2N3737UBJV)
JANS level (2N3737UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
General purpose
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0806
Reference document:
MIL-PRF-19500/395
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise specified
Rating
40
75
5
1.5
0.5
3.07
325
Parameter
Symbol
V
CEO
V
CBO
V
EBO
I
C
Unit
Volts
Volts
Volts
A
W
mW/
°
C
°
C/W
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
°
C
Derate linearly above 37.5
°
C
Thermal Resistance
Operating Junction Temperature
Storage Temperature
P
T
R
θ
JA
T
J
T
STG
-65 to +200
°
C
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