參數(shù)資料
型號(hào)： 2N2221AL
廠商： MICROSEMI CORP-LAWRENCE
元件分類： 小信號(hào)晶體管
英文描述： NPN SILICON SWITCHING TRANSISTOR
中文描述： 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
封裝： SIMILAR TO TO-18, 3 PIN
文件頁數(shù)： 2/3頁
文件大?。?/td> 53K
代理商： 2N2221AL
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
DC Current Gain
2N2221A to 2N2222A
2221A
2222A
>20
>25
>35
SYMBOL TEST CONDITION
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
UNIT
>35
>50
>75
Ta=55 deg C
IC=10mA,VCE=10V
>15
40-120
>20
>25
>35
IC=150mA,VCE=10V
IC=150mA,VCE=1V
IC=500mA,VCE=10V
100-300
>50
>40
DYNAMIC CHARACTERISTICS
ALL f=1kHz
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IE=20mA, VCB=20V
f=31.8MHz
IC=20mA, VCE=20V
f=300MHz
IC=100uA, VCE=10V
Rs=1kohms, f=1kHz
Small Signal Current Gain
hfe
30-150
50-300
1.0-3.5
0.2-1.0 0.25-1.25
<5.0
<2.5
3.0-15
10-100
<150
50-300
75-375
2.0-8.0
Input Impedance
hie
kohms
Voltage Feedback Ratio
hre
<8.0
<4.0
5.0-35
25-200
<150
x10-4
Out put Admittance
hoe
umhos
Collector Base Time Constant
rb'Cc
ps
Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure
Re(hie)
<60
<60
ohms
NF
-
<4.0
dB
DYNAMIC CHARACTERISTICS
Transistors Frequency
ft
IC=20mA, VCE=20V
f=100MHz
VCB=10V, IE=0
f=100kHz
VEB=0.5V, IC=0
f=100kHz
>250
>300
MHz
Out-Put Capacitance
Cob
<8.0
<8.0
pF
Input Capacitance
Cib
<25
<25
pF
SWITCHING Time
Delay time
Rise time
td
tr
IC=150mA,IB1=15mA
VCC=30V,VBE=0.5V
<10
<25
ns
ns
-
Storage time
Fall time
ts
tf
IC=150mA, IB1=
IB2=15mA, VCC=30V -
<225
<60
ns
ns
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%
http://www.bocasemi.com page : 2
相關(guān)PDF資料
PDF描述
2N2222ACSM4 High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、開關(guān)型NPN晶體管（高可靠性、陶瓷表貼封裝）)
2N2222ACSM HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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