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參數(shù)資料
| 型號(hào)： | 2N2060L |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UNITIZED DUAL NPN SILICON TRANSISTOR |
| 中文描述： | 500 mA, 60 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 210K |
| 代理商： | 2N2060L |
Copyright
2002
Rev. G
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 2 of 2
2N2060
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25
°
C
Off Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Volts
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
= 30 mA
60
Collector-Emitter Breakdown Voltage
V
(BR)CER
I
CBO1
I
CBO2
I
CBO3
I
CEO
I
C
= 10 mA, R
BE
= 10
V
CB
= 100 Volts
V
CB
= 80 Volts
V
CB
= 80 Volts, T
A
= 150
°
C
V
CE
= xx Volts
80
Volts
Collector-Base Cutoff Current
10
2
10
μ
A
nA
μ
A
μ
A
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
I
CEX
V
CE
= xx Volts, V
EB
= x Volts
μ
A
Collector-Emitter Cutoff Current
I
CES
I
EBO1
I
EBO2
V
CE
= xx Volts
V
EB
= 7 Volts
V
EB
= 5 Volts
nA
Emitter-Base Cutoff Current
10
2
μ
A
nA
On Characteristics
Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
≤
2.0%
Parameter
Symbol
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
|V
BE1
- V
BE2
|
1
|V
BE1
- V
BE2
|
2
Test Conditions
I
C
= 10
μ
A, V
CE
= 5 Volts
I
C
= 100
μ
A, V
CE
= 5 Volts
I
C
= 1 mA, V
CE
= 5 Volts
I
C
= 10 mA, V
CE
= 5 Volts
I
C
= 100
μ
A, V
CE
= 5 Volts
T
A
= -55
°
C
V
CE
= 5 Volts, I
C
= 100
μ
A
V
CE
= 5 Volts, I
C
= 1 mA
V
CE
= 5 Volts, I
C
= 100
μ
A
T
A
= 25
°
C and -55
°
C
V
CE
= 5 Volts, I
C
= 1 mA
T
A
= 25
°
C and +125
°
C
Min
25
30
40
50
10
Typ
Max
75
90
120
150
Units
DC Current Gain
Base-Emitter Voltage Differential
5
mVolts
Base-Emitter Voltage Differential
change with temperature
|V
BE1
- V
BE2
|
1
|V
BE1
- V
BE2
|
2
.8
1
mVolts
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