
Copyright
 2002 
Rev. G 
Semicoa Semiconductors, Inc. 
333 McCormick Avenue, Costa Mesa, California 92626  714.979.1900, FAX 714.557.4541 
www.
SEMICOA
.com 
Page 1 of 1 
2N2060
Silicon NPN Transistor
Data Sheet
Description 
Semicoa Semiconductors offers: 
 
Screening and processing per MIL-PRF-19500 
Appendix E 
 
JAN level (2N2060J) 
 
JANTX level (2N2060JX) 
 
JANTXV level (2N2060JV) 
 
QCI to the applicable level 
 
100% die visual inspection per MIL-STD-750 method 
2072 for JANTXV 
 
Radiation testing (total dose) upon request 
Please contact Semicoa for special configurations 
www.
SEMICOA
.com or (714) 979-1900
Applications 
 
Matched, Dual Transistors
 
Low power
 
NPN silicon transistor
Features 
 
Hermetically sealed TO-77 metal can 
 
Also available in chip configuration 
 
Chip geometry 0410 
 
Reference document: 
MIL-PRF-19500/270
Benefits 
 
Qualification Levels: JAN, JANTX, and 
JANTXV
 
Radiation testing available
T
C
 = 25
°
C unless otherwise specified
Rating 
60 
100 
7 
500 
540 one section 
600 both sections 
3.08 one section 
3.48 both sections 
1.5 one section 
2.12 both sections 
8.6 one section 
12.1 both sections 
Absolute Maximum Ratings
Parameter 
Symbol 
V
CEO
V
CBO
V
EBO
I
C
Unit 
Volts 
Volts 
Volts 
mA 
mW 
mW 
mW/
°
C 
mW/
°
C 
W 
W 
mW/
°
C 
mW/
°
C 
Collector-Emitter Voltage 
Collector-Base Voltage 
Emitter-Base Voltage 
Collector Current, Continuous 
Power Dissipation, T
A
 = 25
°
C 
Derate linearly above 25
°
C 
P
T
Power Dissipation, T
C
 = 25
°
C 
Derate linearly above 25
°
C 
P
T
Operating Junction Temperature 
Storage Temperature 
T
J 
T
STG
-65 to +200 
°
C