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參數(shù)資料
| 型號(hào)： | 2N1613 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Switches and Universal Amplifiers(硅平面外延工藝NPN晶體管(用于高性能放大器,振蕩器,開(kāi)關(guān)電路)) |
| 中文描述： | 開(kāi)關(guān)和通用放大器（硅平面外延工藝npn型晶體管（用于高性能放大器，振蕩器，開(kāi)關(guān)電路）） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 61K |
| 代理商： | 2N1613 |
ELECTRICAL CHARACTERISTICS
(T
amb
= 25
°
C unless otherwise specified)
Symbol
I
CBO
Parameter
Test Conditions
V
CB
= 60 V
V
CB
= 60 V
Min.
Typ.
Max.
10
10
10
5
Unit
nA
μ
A
nA
nA
Collector Cutoff Current
(I
E
= 0)
Emitter Cutoff Current
(I
C
= 0)
Collector-base Breakdown
Voltage
Collector-emitter
Breakdown Voltage
(R
BE
≤
10
)
Emitter-base Breakdown
Voltage (I
C
= 0)
Collector-emitter
Saturation Voltage
Base-emitter Saturation
Voltage
DC Current Gain
T
amb
= 150
°
C
for
2N1613
for
2N1711
I
EBO
V
EB
= 5 V
V
(BR) CBO
I
C
= 0.1 mA
75
V
V
(BR)CER
*
I
C
= 10 mA
50
V
V
(BR) EBO
I
E
= 0.1 mA
7
V
V
CE (sat )
*
I
C
= 150 mA
I
B
= 15 mA
0.5
1.5
V
V
BE (sat)
*
I
C
= 150 mA
I
B
= 15 mA
0.95
1.3
V
h
FE
*
for
2N1613
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= –55
°
C
for
2N1711
I
C
= 0.01 mA
I
C
= 0.1 mA
I
C
= 10 mA
I
C
= 150 mA
I
C
= 500 mA
I
C
= 10 mA
T
amb
= 55
°
C
for
2N1613
I
C
= 1 mA
f = 1 kHz
for
2N1711
I
C
= 1 mA
f = 1 kHz
I
C
= 50 mA
f = 20 MHz
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
40
20
20
35
50
80
80
55
35
120
h
FE
*
DC Current Gain
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
V
CE
= 10 V
20
35
60
80
130
130
75
65
300
h
fe
Small Signal Current Gain
V
CE
= 10 V
V
CE
= 10 V
30
70
70
135
150
300
f
t
Transition Frequency
V
CE
= 10 V
for
2N1613
for
2N1711
60
70
80
100
MHz
MHz
C
EBO
Emitter-base Capacitance
I
C
= 0
f = 1 MHz
I
E
= 0
f = 1 MHz
V
EB
= 0.5 V
50
80
pF
C
CBO
Collector-base
Capacitance
V
CB
= 10 V
18
25
pF
* Pulsed : pulse duration = 300
μ
s, duty cycle = 1 %.
THERMAL DATA
R
th j-case
R
th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
58
219
°
C/W
°
C/W
2N1613-2N1711
2/5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2N1711S | 68HC11/Bidirectional-Compatible µP Reset Circuit |
| 2N1890S | NPN Transistor |
| 2N1714 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 750MA I(C) | TO-5 |
| 2N1715 | 68HC11/Bidirectional-Compatible µP Reset Circuit |
| 2N1719 | 68HC11/Bidirectional-Compatible µP Reset Circuit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N1613_12 | 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N1613A | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 70V 0.5A 3PIN TO-5 - Bulk |
| 2N1613B | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Small Signal Transistors |
| 2N1613L | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 30V 0.5A 3PIN TO-5 - Bulk |
| 2N1614 | 制造商:n/a 功能描述:2N1614 N7D4D |
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