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參數(shù)資料
| 型號(hào)： | 2N1890S |
| 英文描述： | NPN Transistor |
| 中文描述： | NPN晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | 2N1890S |
TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 225
Devices
Qualified Level
2N1711
2N1890
JAN
JANTX
MAXIMUM RATINGS
Ratings
Symbol
V
CBO
V
EBO
I
C
2N1711
75
2N1890
100
7.0
500
0.8
3.0
-65 to +200
Unit
Vdc
Vdc
mAdc
W
W
0
C
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Impedance
1) Derate linearly 4.57 mW/
0
C for T
A
> 25
0
C
2) Derate linearly 17.2 mW/
0
C for T
C
> 25
0
C
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
T
J
,
T
stg
Symbol
Z
θ
JX
Max.
58
Unit
0
C/W
TO-5*
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I
C
= 100
μ
Adc
Collector-Emitter Breakdown Voltage
R
BE
= 10
, I
C
= 100 mAdc
Collector-Emitter Breakdown Voltage
I
C
= 30 mAdc
Emitter-Base Breakdown Voltage
I
E
= 100
μ
Adc
Collector-Base Cutoff Current
V
CB
= 60 Vdc
V
CB
= 80 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
Min.
Max.
Unit
2N1711, S
2N1890, S
V
(BR)
CBO
75
100
50
80
30
60
7.0
Vdc
2N1711, S
2N1890, S
V
(BR)
CER
Vdc
2N1711, S
2N1890, S
V
(BR)
CEO
Vdc
V
(BR)
EBO
I
CBO
Vdc
η
Adc
2N1711
2N1890
10
10
I
EBO
5.0
η
Adc
120101
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