參數(shù)資料
型號: 2N1613
廠商: RAYTHEON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: NPN Small Signal General Purpose Amplifiers
中文描述: 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
封裝: TO-5, 3 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 51K
代理商: 2N1613
1997 Apr 11
3
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Refer to TO-39 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
65
65
75
50
7
500
1
200
0.8
1.7
3
+150
200
+150
V
V
V
mA
A
mA
W
W
W
°
C
°
C
°
C
T
amb
25
°
C
T
case
= 100
°
C
T
case
25
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-c
thermal resistance from junction to ambient
thermal resistance from junction to case
note 1
218
58.3
K/W
K/W
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