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參數(shù)資料
| 型號(hào)： | 2N1613 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN medium power transistor |
| 中文描述： | 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 封裝： | METAL CAN-3 |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | 2N1613 |
1997 Apr 11
4
Philips Semiconductors
Product specification
NPN medium power transistor
2N1613
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 150
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V; note 1
I
C
= 10 mA; V
CE
= 10 V; T
amb
=
55
°
C 20
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
20
35
10
10
10
120
1.5
1.3
25
80
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
40
20
60
V
CEsat
V
BEsat
C
c
C
e
f
T
collector-emitter saturation voltage I
C
= 150 mA; I
B
= 15 mA
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
V
V
pF
pF
MHz
I
C
= 150 mA; I
B
= 15 mA
I
E
= i
e
= 0; V
CB
= 10 V
I
C
= i
c
= 0; V
EB
= 0.5 V
I
C
= 50 mA; V
CE
= 10 V; f = 100 MHz
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