
2MBI300N-120-01
1200V / 300A  2
in one-package
IGBT Module
Features
· VCE(sat) classified for easy parallel connection
· High speed switching
· Voltage drive
· Low inductance module structure
Applications
· Inverter for  Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item  
Symbol
Collector-Emitter voltage                    V
CES
Gate-Emitter voltage                           V
GES
Collector     Continuous                       I
C
current         1ms                                 I
C
 pulse
                                                            -I
C
                     1ms                                -I
C
 pulse
Max. power dissipation                        P
C
Operating temperature                         T
j
Storage temperature                            T
stg
Isolation voltage                                   V
is
Screw torque                                       Mounting  *
1
                                                           Terminals *
2
Rating
     1200
       ±20
       300
       600
       300
       600
     2100
     +150
 -40 to +125
 AC 2500 (1min.)
          3.5
          4.5
Unit
 V
 V
 A
 A
 A
 A
 W
 °C
 °C
 V
 N·m
 N·m
Item                                                   Symbol           Characteristics                          Conditions                                    Unit
                                                                                   Min.          Typ.          Max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
t
on
t
r
t
off
t
f
V
F
t
rr
    –              –                0.35
Turn-off time
Diode forward on voltage
Reverse recovery time
I
CES
I
GES
V
GE(th)
V
CE(sat)
C
ies
C
oes
C
res
    –              –              3.0
    –              –            45
   4.5            –              7.5
    –              –               3.3
    –         48000             –
    –         17400             –
    –         15480             –
    –              –               1.2
    –                 0.25        0.6
    –              –                1.5
    –                 0.35        0.5
    –              –                3.0
V
GE
=0V,  V
CE
=1200V
V
CE
=0V,  V
GE
=±20V
V
CE
=20V,  I
C
=300mA
V
GE
=15V,  I
C
=300A
V
GE
=0V
V
CE
=10V
f=1MHz
V
CC
=600V
I
C
=300A
V
GE
=±15V
R
G
=2.7ohm
I
F
=300A,  V
GE
=0V
I
F
=300A
mA
μA
V
V
pF
μs
V
μs
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Item                                                   Symbol           Characteristics                          Conditions                                   Unit
                                                                                   Min.         Typ.          Max.
                                                           Rth(j-c)
Thermal resistance                            Rth(j-c)
                                                           Rth(c-f)*
    –           0.0167           –
* : 
This is the value which is defined mounting on the additional cooling fin with thermal compound
    –              –             0.06
    –              –             0.15
IGBT
Diode
the base to cooling fin
°C/W
°C/W
°C/W
Equivalent Circuit Schematic
¤ Current control circuit
     G1            E1                       G2            E2
C1
E2
C2E1
¤
¤
*
1 : 
Recommendable value : 2.5 to 3.5N·m (M5) or (M6)
*
2 : 
Recommendable value : 3.5 to 4.5N·m (M6)
V
CE(sat)
 classification
Rank     Lenge              Conditions
 F              2.25  to 2.50V
 A              2.40  to 2.65V          Ic = 300A
 B              2.55  to 2.80V          V
GE
 = 15V
 C              2.70  to 2.95V         Tj = 25°C
 D              2.85  to 3.10V
 E              3.00  to 3.30V