- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366209 > 2ED020I12-F (INFINEON TECHNOLOGIES AG) Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules PDF資料下載
參數(shù)資料
| 型號： | 2ED020I12-F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules |
| 中文描述： | 2 A 2 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PDSO18 |
| 封裝： | 0.300 INCH, PLASTIC, DSO-20/18 |
| 文件頁數(shù)： | 9/18頁 |
| 文件大小： | 400K |
| 代理商： | 2ED020I12-F |
Datasheet and Application
EiceDRIVER
2ED020I12-F
www.eupec.com - www.eicedriver.com
Page 9/18
5
Electrical parameters
5.1
Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction of the integrated circuit. Unless other-
wise noted all parameters refer to GND. The pins GND and GNDL have to be connected externally through the shortest possible way.
Limit values
Parameter
Symbol
min.
High side ground
V
GNDH
-1200
High side supply voltage
V
VSH
-0.3
High side gate driver output
V
OutH
-0.3
Low side ground
V
GNDL
-0.3
Low side supply voltage
V
VSL
-0.3
Low side gate driver output
V
OutL
-0.3
Logic input voltages
(InH, InL, /SD)
OP input voltages
(OP-, OP+)
OP output voltage
V
OPO
-0.3
CP input voltages
(CP-, CP+)
CP output voltage
V
/CPO
-0.3
CP output max. sink current
I
/CPO
High side ground, voltage tran-
sient
Package power dissipation
@T
A
=25°C
Thermal resistance (both chips
active), junction to ambient
Thermal resistance (high side
chip), junction to ambient
Thermal resistance (low side
chip), junction to ambient
Junction temperature
T
J
Storage temperature
T
S
-55
1)
with reference to high side GNDH
2)
with reference to both GND and GNDL
3)
with reference to low side ground GNDL
4)
please note the different specifications for the operating range
5)
considering R
THJA
= 60 K/W, e.g. both chips active
6)
device soldered to reference PCB without cooling area
Absolute maximum ratings
max.
1200
20
V
VSH
+ 0.3
5.3
20
V
VSL
+ 0.3
5.3
Unit
Remark
V
V
V
V
V
V
V
1)
1)
2)
3)
V
In
-0.3
V
OP
-0.3
5.3
V
4)
5.3
5.3
V
V
4)
V
CP
-0.3
5.3
5
50
V
mA
V/ns
dV
GNDH
/dt
-50
P
D
2
W
5)
R
THJA
60
K/W
6)
R
THJA(HS)
110
K/W
6)
R
THJA(LS)
110
K/W
6)
150
150
°C
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2EZ100 | surface mount silicon Zener diodes |
| 2EZ100 | surface mount silicon Zener diodes |
| 2EZ3.6D5 | surface mount silicon Zener diodes |
| 2EZ9.1D5 | CAP 3.3UF 50V 10% X7R AXIAL BULK S-MIL-PRF-39014 |
| 2EZ75D5 | surface mount silicon Zener diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2ED020I12-F2 | 制造商:Infineon Technologies AG 功能描述: |
| 2ED020I12F2XT | 制造商:Infineon Technologies 功能描述:DRIVER IC |
| 2ED020I12F2XUMA1 | 功能描述:IC DRIVER IGBT DSO36 制造商:infineon technologies 系列:EiceDriver? 包裝:剪切帶（CT） 零件狀態(tài):新產(chǎn)品 驅(qū)動配置:半橋 通道類型:獨立式 驅(qū)動器數(shù):2 柵極類型:IGBT 電壓 - 電源:13 V ~ 20 V 邏輯電壓?- VIL，VIH:1.5V，3.5V 電流 - 峰值輸出（灌入，拉出）:2A，2A 輸入類型:反相，非反相 高壓側(cè)電壓 - 最大值（自舉）:1200V 上升/下降時間（典型值）:30ns，50ns 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:36-BSSOP（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:PG-DSO-36-38 標準包裝:1 |
| 2ED020I12FA | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Dual IGBT Driver IC |
| 2ED020I12FAXUMA1 | 制造商:Infineon Technologies AG 功能描述:DRIVE 制造商:Infineon Technologies AG 功能描述:DRIVER IC - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。