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參數(shù)資料
| 型號： | 2ED020I12-F |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Dual IGBT Driver IC for eupec Low and Medium Power IGBT Modules |
| 中文描述： | 2 A 2 CHANNEL, HALF BRIDGE BASED PRPHL DRVR, PDSO18 |
| 封裝： | 0.300 INCH, PLASTIC, DSO-20/18 |
| 文件頁數(shù)： | 10/18頁 |
| 文件大?。?/td> | 400K |
| 代理商： | 2ED020I12-F |
Datasheet and Application
EiceDRIVER
2ED020I12-F
www.eupec.com - www.eicedriver.com
Page 10/18
5.2
Within the operating range the IC operates as described in the functional description. Unless otherwise noted all parameters refer to GND.
Limit values
Parameter
Symbol
min.
High side ground
V
GNDH
-1200
High side supply voltage
V
VSH
13
Low side supply voltage
V
VSL
13
Logic input voltages
(InH, InL, /SD)
OP input voltages
(OP-, OP+)
CP input voltages
(CP-, CP+)
Ambient temperature
T
A
-40
1)
with reference to high side ground GNDH
2)
with reference to both GND and GNDL
Operating range
max.
1200
18
18
5
Unit
Remark
V
V
V
V
1)
2)
V
In
0
V
OP
-0.1
2
V
V
CP
-0.1
2
V
105
°C
5.3
The electrical characteristics involve the spread of values for the supply voltages, load and junction temperature given below. Typical values
represent the median values, which are related to production processes. Unless otherwise noted all voltages are given with respect to ground
(GND).
VSL = 15 V, VSH = 15 V
1)
, C
L
= 1 nF, T
A
= 25°C. Positive currents are assumed to be flowing into pins.
Electrical characteristics
5.3.1
Parameter
Voltage Supply
Limit Values
min.
Symbol
typ.
max.
1
Unit
Test condition
High side leakage current
I
GNDH
μA
V
GNDH
= 1.2 kV
V
GNDL
= 0 V
V
VSH
= 15 V
1)
V
VSH
= 10 V
1)
tbd
1.7
12
500
tbd
mA
μA
V
High side quiescent supply current
I
VSH
High side under-voltage lockout,
upper threshold
High side under-voltage lockout
hysteresis
Low side quiescent supply current
V
VSH
1)
V
VSH
tbd
1
tbd
V
tbd
2.4
12
500
tbd
mA
μA
V
V
VSL
= 15 V
V
VSL
= 10 V
I
VSL
Low side under-voltage lockout,
upper threshold
Low side under-voltage lockout
hysteresis
1)
with reference to high side ground GNDH
V
VSL
V
VSL
tbd
1
tbd
V
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|---|---|
| 2ED020I12-F2 | 制造商:Infineon Technologies AG 功能描述: |
| 2ED020I12F2XT | 制造商:Infineon Technologies 功能描述:DRIVER IC |
| 2ED020I12F2XUMA1 | 功能描述:IC DRIVER IGBT DSO36 制造商:infineon technologies 系列:EiceDriver? 包裝:剪切帶（CT） 零件狀態(tài):新產(chǎn)品 驅(qū)動配置:半橋 通道類型:獨立式 驅(qū)動器數(shù):2 柵極類型:IGBT 電壓 - 電源:13 V ~ 20 V 邏輯電壓?- VIL，VIH:1.5V，3.5V 電流 - 峰值輸出（灌入，拉出）:2A，2A 輸入類型:反相，非反相 高壓側(cè)電壓 - 最大值（自舉）:1200V 上升/下降時間（典型值）:30ns，50ns 工作溫度:-40°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:36-BSSOP（0.295"，7.50mm 寬） 供應(yīng)商器件封裝:PG-DSO-36-38 標準包裝:1 |
| 2ED020I12FA | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Dual IGBT Driver IC |
| 2ED020I12FAXUMA1 | 制造商:Infineon Technologies AG 功能描述:DRIVE 制造商:Infineon Technologies AG 功能描述:DRIVER IC - Tape and Reel |
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