參數(shù)資料
型號(hào)： 28F800F3
廠(chǎng)商： Intel Corp.
英文描述： 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 3伏快速啟動(dòng)塊閃存（3伏分位快速引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 44/47頁(yè)
文件大?。?/td> 277K
代理商： 28F800F3
FAST BOOT BLOCK DATASHEET
E
44
PRODUCT PREVIEW
8.12
AC Characteristics
—Read-Only Operations
(1)
—
Automotive Temperature
#
Sym
Parameter
Notes
Min
Max
Unit
R1
t
CLK
CLK Period
15
ns
R2
t
CH
(t
CL
)
CLK High (Low) Time
2.5
ns
R3
t
CHCL
(t
CLCH
)
CLK Fall (Rise) Time
5
ns
R4
t
AVCH
Address Valid Setup to CLK
17
ns
R5
t
VLCH
ADV# Low Setup to CLK
17
ns
R6
t
ELCH
CE# Low Setup to CLK
17
ns
R7
t
CHQV
CLK to Output Delay
30
ns
R8
t
CHQX
Output Hold from CLK
5
ns
R9
t
CHAX
Address Hold from CLK
3
10
ns
R10
t
CHTL
(t
CHTH
)
CLK to WAIT# delay
5
30
ns
R11
t
AVVH
Address Setup to ADV# Going High
19
ns
R12
t
ELVH
CE# Low to ADV# Going High
19
ns
R13
t
AVQV
Address to Output Delay
150
ns
R14
t
ELQV
CE# Low to Output Delay
2
150
ns
R15
t
VLQV
ADV# Low to Output Delay
150
ns
R16
t
VLVH
ADV# Pulse Width
19
ns
R17
t
VHVL
ADV# Pulse Width
19
ns
R18
t
VHAX
Address Hold from ADV# Going High
3
3
ns
R19
t
APA
Page Address Access Time
35
ns
R20
t
GLQV
OE# Low to Output Delay
50
ns
R21
t
RHQV
RST# High to Output Delay
600
ns
R22
t
EHQZ
t
GHQZ
CE# or OE# High to Output in High Z,
Whichever Occurs First
4
40
ns
R23
t
OH
Output Hold from Address, CE#, or OE#
Change, Whichever Occurs First
4
0
ns
NOTES:
1.
2.
3.
4.
See AC Input/Output Reference Waveform for timing measurements and maximum allowable input slew rate.
OE# may be delayed up to t
ELQV
-t
GLQV
after the falling edge of CE# without impact on t
ELQV
.
Sampled, not 100% tested.
Output loading on WAIT# equals 15 pF.
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