參數(shù)資料
型號(hào)： 28F800F3
廠商： Intel Corp.
英文描述： 3 Volt Fast Boot Block Flash Memory(3 V 8M位快速引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 3伏快速啟動(dòng)塊閃存（3伏分位快速引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 17/47頁(yè)
文件大?。?/td> 277K
代理商： 28F800F3
E
4.6
FAST BOOT BLOCK DATASHEET
17
PRODUCT PREVIEW
Program Command
Program operation is executed by a two-cycle
command sequence. Program setup (standard 40H
or alternate 10H) is written, followed by a second
write that specifies the address and data. The WSM
then takes over, controlling the internal program
algorithm. After the program sequence is written,
the device automatically outputs status register
data when read (see Figure 8, Automated Program
Flowchart). The CPU can detect the completion of
the program event by analyzing status register bit
SR.7.
When the program operation completes, check
status register bit SR.4 for an error flag (
“1”). If an
error is detected, check status register bits SR.5,
SR.3, and SR.1 to understand what caused the
problem. After examining the status register, it
should be cleared if an error was detected before
issuing a new command. The device will remain in
status register read mode until another command is
written to the CUI.
4.7
Block Erase Suspend/Resume
Command
The Block Erase Suspend command allows block
erase interruption to read or program data in
another blocks. Once the block erase process
starts, writing the Block Erase Suspend command
requests that the WSM suspend the block erase
operation after a certain latency period. The device
continues to output status register data when read
after the Block Erase Suspend command is issued.
Status Register bits SR.7 and SR.6 indicate when
the block erase operation has been suspended
(both will be set to “1”). Specification t
WHRH2
defines
the block erase suspend latency.
At this point, a Read Array command can be written
to read data from blocks other than that which is
suspended. A Program command sequence can
also be issued during erase suspend to program
data in other blocks. Using the Program Suspend
command (see Section 4.8), a program operation
can be suspended during an erase suspend. The
only other valid commands while block erase is
suspended are Read Status Register and Block
Erase Resume.
During a block erase suspend, the chip can go into
a pseudo-standby mode by taking CE# to V
IH
,
which reduces active current draw. V
PP
must
remain at V
PPH1/2
while block erase is suspended.
WP# must also remain at V
IL
or V
IH
.
To resume the block erase operation, write the
Block Erase Resume command to the CUI. This will
automatically clear status register bits SR.6 and
SR.7. After the Erase Resume command is written,
the device automatically outputs status register
data when read (see Figure 9,
Block Erase
Suspend/Resume Flowchart
). Block erase cannot
resume until program operations initiated during
block erase suspend have completed.
4.8
Program Suspend/Resume
Command
The Program Suspend command allows program
interruption to read data in other flash memory
locations. Once the program process starts, writing
the Program Suspend command requests that the
WSM suspend the program operation after a certain
latency period. The device continues to output
status register data when read after issuing
Program Suspend command. Status register bits
SR.7 and SR.2 indicate when the block erase
operation has been suspended (both will be set to
“1”). Specification t
WHRH1
defines the program
suspend latency.
At this point, a Read Array command can be written
to read data from blocks other than that which is
suspended. The only other valid commands while
block erase is suspended are Read Status Register
and Program Resume.
During a program suspend, the chip can go into a
pseudo-standby mode by taking CE# to V
IH
, which
reduces active current draw. V
PP
must remain at
V
PPH1/2
while program is suspended. WP# must
also remain at V
IL
or V
IH
.
To resume the program, write the Program Resume
command to the CUI. This will automatically clear
status register bits SR.7 and SR.2. After the Erase
Resume
command
is
automatically outputs status register data when
read (see Figure 10,
Program Suspend/Resume
Flowchart
).
written,
the
device
相關(guān)PDF資料
PDF描述
28F160F3 16MBIT Fast Boot Block Flash Memory(16兆位的快速引導(dǎo)塊閃速存儲(chǔ)器)
28F2001BX-T 5V/3.3V or Adjustable, Low-Dropout, Low-IQ, 500mA Linear Regulators
28F256 FASTENERS, TIES CABLE
28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
28F320S3 WORD-WIDE FlashFile MEMORY FAMILY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28FAN2500_AAA3A862 WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
28FAN2502_AAA3A862 WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
28FAN2503_AAA3A862 WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
28FAN2508_AAA3A862 WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
28FAN2509_AAA3A862 WAF 制造商:Fairchild Semiconductor Corporation 功能描述:
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*