參數(shù)資料
型號: 28F800BV-T
英文描述: 8-MBIT (512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述: 8兆位(為512k × 16。1024K × 8)SmartVoltage啟動塊閃存系列
文件頁數(shù): 33/44頁
文件大?。?/td> 496K
代理商: 28F800BV-T
28F400BL-T/B, 28F004BL-T/B
DC CHARACTERISTICS
(4)
V
CC
e
5.0V
g
10%
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1
g
1.0
m
A
V
CC
e
V
CC
Max
V
IN
e
V
CC
or GND
V
CC
e
V
CC
Max
V
OUT
e
V
CC
or GND
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
IH
V
CC
e
V
CC
Max
CE
Y
e
RP
Y
e
V
CC
g
0.2V
RP
Y
e
GND
g
0.2V
I
OUT
e
0 mA
V
CC
e
V
CC
Max, CE
Y
e
GND
f
e
5 MHz, I
OUT
e
0 mA
CMOS Inputs
I
LO
Output Leakage Current
1
g
10
m
A
I
CCS
V
CC
Standby Current
1
1.5
mA
100
m
A
I
CCD
V
CC
Deep Power-Down Current
1
1.2
m
A
I
CCR
V
CC
Read Current for
28F400BX-L Word-Wide Mode
and Byte Wide Mode
and 28F004BX-L
1
40
mA
40
mA
V
CC
e
V
CC
Max, CE
Y
e
V
IL
f
e
5 MHz, I
OUT
e
0 mA
TTL Inputs
I
CCW
V
CC
Word Byte Write Current
1, 4
70
mA
Word Write in Progress
I
CCE
V
CC
Block Erase Current
1, 4
30
mA
Block Erase in Progress
I
CCES
V
CC
Erase Suspend Current
1, 2
10
mA
Block Erase Suspended,
CE
Y
e
V
IH
V
PP
s
V
CC
RP
Y
e
GND
g
0.2V
I
PPS
V
PP
Standby Current
1
g
10
m
A
I
PPD
V
PP
Deep Power-Down Current
1
5.0
m
A
I
PPR
V
PP
Read Current
1
200
m
A
V
PP
l
V
CC
V
PP
e
V
PPH
Word Write in Progress
I
PPW
V
PP
Word Write Current
1, 4
40
mA
I
PPW
V
PP
Byte Write Current
1, 4
30
mA
V
PP
e
V
PPH
Byte Write in Progress
I
PPE
V
PP
Block Erase Current
1, 4
30
mA
V
PP
e
V
PPH
Block Erase in Progress
I
PPES
V
PP
Erase Suspend Current
1
200
m
A
V
PP
e
V
PPH
Block Erase Suspended
I
RP
Y
RP
Y
Boot Block
Unlock Current
1, 4
500
m
A
RP
Y
e
V
HH
I
ID
A
9
Intelligent
Identifier Current
1, 4
500
m
A
A
9
e
V
ID
V
ID
A
9
Intelligent
Identifier Voltage
11.4 12.0
13.0
V
33
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