參數(shù)資料
型號(hào)： 28F800BV-T
英文描述： 8-MBIT (512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
中文描述： 8兆位（為512k × 16。1024K × 8）SmartVoltage啟動(dòng)塊閃存系列
文件頁(yè)數(shù)： 23/44頁(yè)
文件大?。?/td> 496K
代理商： 28F800BV-T
28F400BL-T/B, 28F004BL-T/B
Similar to erasure, the status register indicates
whether programming is complete. While the pro-
gram sequence is executing, bit 7 of the status regis-
ter is a ‘‘0’’. The status register can be polled by
toggling either CE
Y
or OE
Y
to determine when the
program sequence is complete. Only the Read
Status Register command is valid while program-
ming is active.
When programming is complete, the status bits,
which indicate whether the program operation was
successful, should be checked. If the programming
operation was unsuccessful, Bit 4 of the status regis-
ter is set to a ‘‘1’’ to indicate a Program Failure. If
Bit 3 is set then V
PP
was not within acceptable limits,
and the WSM will not execute the programming se-
quence.
The status register should be cleared before at-
tempting the next operation. Any CUI instruction can
follow after programming is completed; however, it
must be recognized that reads from the memory,
status register, or Intelligent Identifier cannot be ac-
complished until the CUI is given the appropriate
command. A Read Array command must first be giv-
en before memory contents can be read.
Figure 12 shows a system software flowchart for de-
vice byte programming operation. Figure 13 shows a
similar flowchart for device word programming oper-
ation (28F400BL-only).
4.4.5 ERASE MODE
Erasure of a single block is initiated by writing the
Erase Setup and Erase Confirm commands to the
CUI, along with the addresses, A
[
12:17
]
for the
28F400BL or A
[
12:18
]
for the 28F004BL, identifying
the block to be erased. These addresses are latched
internally when the Erase Confirm command is is-
sued. Block erasure results in all bits within the block
being set to ‘‘1’’.
The WSM will execute a sequence of internally
timed events to:
1. program all bits within the block
2. verify that all bits within the block are sufficiently
programmed
3. erase all bits within the block and
4. verify that all bits within the block are sufficiently
erased
While the erase sequence is executing, Bit 7 of the
status register is a ‘‘0’’.
When the status register indicates that erasure is
complete, the status bits, which indicate whether the
erase operation was successful, should be checked.
If the erasure operation was unsuccessful, Bit 5 of
the status register is set to a ‘‘1’’ to indicate an
Erase Failure. If V
PP
was not within acceptable limits
after the Erase Confirm command is issued, the
WSM will not execute an erase sequence; instead,
Bit 5 of the status register is set to a ‘‘1’’ to indicate
an Erase Failure, and Bit 3 is set to a ‘‘1’’ to identify
that V
PP
supply voltage was not within acceptable
limits.
The status register should be cleared before at-
tempting the next operation. Any CUI instruction can
follow after erasure is completed; however, it must
be recognized that reads from the memory array,
status register, or Intelligent Identifier can not be ac-
complished until the CUI is given the appropriate
command. A Read Array command must first be giv-
en before memory contents can be read.
Figure 13 shows a system software flowchart for
Block Erase operation.
4.4.5.1 Suspending and Resuming Erase
Since an erase operation typically requires 2 sec-
onds to 5 seconds to complete, an Erase Suspend
command is provided. This allows erase-sequence
interruption in order to read data from another block
of the memory. Once the erase sequence is started,
writing the Erase Suspend command to the CUI re-
quests that the Write State Machine (WSM) pause
the erase sequence at a predetermined point in the
erase algorithm. The status register must be read to
determine when the erase operation has been sus-
pended.
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register operation.
Figure 14 shows a system software flowchart detail-
ing the operation.
During Erase Suspend mode, the chip can go into a
pseudo-standby mode by taking CE
Y
to V
IH
and the
active current is now a maximum of 6 mA. If the chip
is enabled while in this mode by taking CE
Y
to V
IL
,
the Erase Resume command can be issued to re-
sume the erase operation.
23
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