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  • 參數(shù)資料
    型號: 28F320D18
    廠商: Intel Corp.
    英文描述: 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器)
    中文描述: 1.8 V的英特爾雙平面閃存(1.8伏英特爾雙平面閃速存儲器)
    文件頁數(shù): 29/83頁
    文件大?。?/td> 836K
    代理商: 28F320D18
    28F320D18
    Product Preview
    25
    0672_07
    Figure 7. Automated Block Erase Flowchart
    Suspend
    Blk. Erase
    Loop
    Start
    Write 20H,
    Block Address
    Write D0H,
    Block Address
    Read Status Register
    SR.7 =
    Full Status
    Check if Desired
    Block Erase Complete
    FULL STATUS CHECK PROCEDURE
    Repeat for subsequent block erasures.
    Full status check can be done after each block erase or after a
    sequence of block erasures.
    Write FFH after the last operation to place device in read array mode.
    SR.5, SR.4, SR.3 and SR.1 are only cleared by the Clear Staus
    Register command, in cases where multiple blocks are erased before
    full status is checked.
    If an error is detected, clear the status register before attempting retry
    or other error recovery.
    No
    Yes
    Suspend
    Block Erase
    1
    0
    Comments
    Data = 20H
    Addr = Within Block to Be
    Erased
    Data = D0H
    Addr = Within Block to Be
    Erased
    Status Register Data
    Addr = Within Block to Be
    Erased
    Check SR.7
    1 = WSM Ready
    0 = WSM Busy
    Comments
    Check SR.3
    1 = V
    PP
    Error Detect
    Check SR.1
    1 = Device Protect Detect
    Read Status Register
    Data (See Above)
    V
    PP
    Range Error
    Device Protect Error
    Block Erase
    Successful
    SR.3 =
    SR.1 =
    1
    0
    1
    0
    Command Sequence
    Error
    SR.4, 5 =
    1
    0
    Block Erase Error
    SR.5 =
    1
    0
    Check SR.4, 5
    Both 1 = Command Sequence
    Error
    Check SR.5
    1 = Block Erase Error
    Bus Operation
    Write
    Write
    Standby
    Read
    Command
    Erase Setup
    Erase Confirm
    Bus Operation
    Standby
    Standby
    Standby
    Standby
    Command
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