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參數(shù)資料
| 型號： | 28F320D18 |
| 廠商： | Intel Corp. |
| 英文描述： | 1.8 Volt Intel Dual-Plane Flash Memory(1.8 V Intel 雙平面閃速存儲器) |
| 中文描述： | 1.8 V的英特爾雙平面閃存（1.8伏英特爾雙平面閃速存儲器） |
| 文件頁數(shù)： | 14/83頁 |
| 文件大?。?/td> | 836K |
| 代理商： | 28F320D18 |
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28F320D18
10
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3.2
Flexible Block Locking
For both configuration and status modes, 1.8 Volt Dual-Plane Flash memory will decode the block
locking and status registers within each partition.
1.8 Volt Dual-Plane Flash memory offers an instant, individual block locking scheme that allows
any block to be locked or unlocked with no latency, enabling instant code and data protection.
1.8 Volt Dual-Plane Flash memory also features a hardware lock-down on main blocks and
parameter blocks. This enables critical code and data security while other blocks are programmed
or erased.
This locking scheme offers two levels of protection. The first level allows software-only control of
block locking (useful for data blocks that change frequently), while the second level requires
hardware interaction before locking can be changed (useful for code blocks that change
infrequently).
Each block can be set to Locked, Unlocked, and Lock-Down, as described in the following
sections. A comprehensive state table for the locking functions is shown in
Table 3, “Block
Locking State Transitions” on page 11
, and a flowchart for locking operations is shown in
Figure
11, “Locking Operations Flowchart” on page 29
.
A block can be Locked, Unlocked and Locked-
Down in one partition while programming or erasing the other partition.
The following sections will discuss the operation of the locking system. The term “state [XYZ]”
will be used to specify locking states; e.g., “state [001],” where X = value of WP#, Y = bit DQ
1
of
the Block Lock status, and Z = bit DQ
0
of the Block Lock status.
Table 3
defines all of these
possible locking states.
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