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參數(shù)資料
| 型號(hào)： | 28F200B5 |
| 廠商： | Intel Corp. |
| 英文描述： | 5V Boot Block Flash Memory(5 V 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 5V的啟動(dòng)塊閃存（5伏引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 34/44頁(yè) |
| 文件大?。?/td> | 345K |
| 代理商： | 28F200B5 |
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28F200B5, 28F004/400B5, 28F800B5
E
34
PRELIMINARY
5.6
AC Characteristics
—Read Operations—Commercial and Extended
Temperature
Temp
Commercial
Extended
Speed
-60/-70
-80/-90
-80/-90
#
Sym
Parameter
V
CC
5V
±
5%
(4)
5V
±
10%
(5)
5V
±
10%
(5)
5V
±
10%
(5)
Unit
Load
30 pF
100 pF
100 pF
100 pF
Notes
Min
Max
Min
Max
Min
Max
Min
Max
R1
t
AVAV
Read Cycle
2, 4 Mbit
7
55
70
80
80
ns
Time
8 Mbit
70
80
90
90
ns
R2
t
AVQV
Address to
2, 4 Mbit
7
55
70
80
80
ns
Output Delay
8 Mbit
70
80
90
90
ns
R3
t
ELQV
CE# to
2, 4 Mbit
2,7
55
70
80
80
ns
Output Delay
8 Mbit
70
80
90
90
ns
R4
t
GLQV
OE# to Output Delay
2
30
35
40
40
ns
R5
t
PHQV
RP# to Output Delay
450
450
450
450
ns
R6
t
ELQX
CE# to Output in Low Z
3
0
0
0
0
ns
R7
t
GLQX
OE# to Output in Low Z
3
0
0
0
0
ns
R8
t
EHQZ
CE# to Output in High Z
3
20
20
20
25
ns
R9
t
GHQZ
OE# to Output in High Z
3
20
20
20
25
ns
R10
t
OH
Output Hold from Address,
CE#, or OE# Change,
Whichever Occurs First
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
5.
6.
See AC Input/Output Reference Waveform for timing measurements.
OE# may be delayed up to t
CE
–t
OE
after the falling edge of CE# without impact on t
CE
.
Sampled, but not 100% tested.
See
Test Configuration
(Figure 13), 5 V High-Speed Test component values.
See
Test Configuration
(Figure 13), 5 V Standard Test component values.
Dynamic BYTE# switching between word and byte modes is not supported. Mode changes must be made when the device
is in deep power-down or powered down.
As of the publication date of this document, not all 28F200B5 –60 devices meet the 55 ns read specification. Please refer
to the
5 Volt Boot Block Flash Memory Family 28F200B5, 28F004/400B5, 28F800B5 Specification Update
to determine
the specific 28F200B5 –T/B60 material that is capable of 55 ns read access times. All other 28F200B5 T/B60 devices are
capable of 60 ns read access times when V
CC
= 5 V ± 5% and 30 pF load.
7.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F200BV-TB | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-TB | 2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BX-B | 5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller |
| 28F200BX-T | Evaluation Kit for the MAX608 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F200BL-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BL-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 28F200BL-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8)LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F200BV-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
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