參數(shù)資料
型號: 28F200B5
廠商: Intel Corp.
英文描述: 5V Boot Block Flash Memory(5 V 引導塊閃速存儲器)
中文描述: 5V的啟動塊閃存(5伏引導塊閃速存儲器)
文件頁數(shù): 29/44頁
文件大?。?/td> 345K
代理商: 28F200B5
E
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0 V, T = +25 °C. These currents are valid for all
product versions (packages and speeds).
2. I
CCES
is specified with the device deselected. If the device is read while in erase suspend mode, current draw is the sum of
I
CCES
and I
CCR
.
3. Block erases and word/byte program operations are inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between
V
PPH
1 and V
PPLK
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical, in static operation.
6. CMOS Inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL Inputs are either V
IL
or V
IH
.
28F200B5, 28F004/400B5, 28F800B5
29
PRELIMINARY
5.5
DC Characteristics
—Automotive Temperature
Sym
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
IL
Input Load Current
1
± 5.0
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
± 10
μA
I
CCS
V
CC
Standby Current
1,3
0.8
2.5
mA
TTL
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
2, 4 Mbit
70
250
μA
CMOS
V
CC
= V
CC
Max
CE# = V
IL
f = 10 MHz
I
OUT
= 0 mA
Inputs = V
IL
or V
IH
8 Mbit
70
220
μA
I
CCD
V
CC
Deep
Power-Down
Current
2, 4 Mbit
1
0.2
105
μA
V
CC
= V
CC
Max
V
IN
= V
CC
or GND
RP# = GND ± 0.2 V
8 Mbit
1
0.2
104.5
μA
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