參數(shù)資料
型號(hào): 28F016S3
英文描述: Evaluation Kit for the MAX5950/MAX5951
中文描述: 字節(jié)寬的SMART 3 FlashFile Memory系列4。 8。及16兆比特
文件頁數(shù): 32/59頁
文件大?。?/td> 384K
代理商: 28F016S3
3 VOLT ADVANCED+ BOOT BLOCK
E
32
PRODUCT PREVIEW
4.6
AC Characteristics
—Write Operations
(1)
—Extended Temperature
Product
-90
-110
3.0 V
– 3.6 V
80
100
2.7 V – 3.6 V
90
110
#
Symbol
t
PHWL
/
t
PHEL
t
ELWL
/
t
WLEL
t
ELEH
/
t
WLWH
t
DVWH
/
t
DVEH
t
AVWH
/
t
AVEH
t
WHEH
/
t
EHWH
t
WHDX
/
t
EHDX
t
WHAX
/
t
EHAX
t
WHWL
/
t
EHEL
t
VPWH
/
t
VPEH
Parameter
Note
Min
Min
Min
Min
Unit
W1
RP# High Recovery to WE#
(CE#) Going Low
150
150
150
150
ns
W2
CE# (WE#) Setup to WE#
(CE#) Going Low
0
0
0
0
ns
W3
WE# (CE#) Pulse Width
4
50
60
70
70
ns
W4
Data Setup to WE# (CE#)
Going High
2
50
50
60
60
ns
W5
Address Setup to WE# (CE#)
Going High
2
50
60
70
70
ns
W6
CE# (WE#) Hold Time from
WE# (CE#) High
0
0
0
0
ns
W7
Data Hold Time from WE#
(CE#) High
2
0
0
0
0
ns
W8
Address Hold Time from WE#
(CE#) High
2
0
0
0
0
ns
W9
WE# (CE#) Pulse Width High
4
30
30
30
30
ns
W10
V
Setup to WE# (CE#) Going
High
3
200
200
200
200
ns
W11
t
QVVL
V
PP
Hold from Valid SRD
3
0
0
0
0
ns
NOTES:
1.
2.
3.
4.
Write timing characteristics during erase suspend are the same as during write-only operations.
Refer to Table 5 for valid A
IN
or D
IN
.
Sampled, but not 100% tested.
Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last)
to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
= t
. Similarly, Write pulse width high (t
) is defined
from CE# or WE# going high (whichever goes high first)
to CE# or WE# going low (whichever goes low first). Hence,
t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
See Test Configuration (Figure 8).
5.
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