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| 型號(hào)： | 28F001BN-B |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 1兆位（128K的× 8）引導(dǎo)塊閃存 |
| 文件頁數(shù)： | 30/44頁 |
| 文件大小： | 496K |
| 代理商： | 28F001BN-B |
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28F400BL-T/B, 28F004BL-T/B
5.0 OPERATING SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS
Operating Temperature
During Read ààààààààààààààà
b
20
§
C to
a
70
§
C
(1)
During Block Erase/Byte Write àààà0
§
C to
a
70
§
C
Temperature Under Biasààààààààà
b
20
§
C to
a
80
§
C
Storage Temperature àààààààààà
b
65
§
C to
a
125
§
C
Voltage on any Pin
(except V
CC
, V
PP
, A
9
and RP
Y
)
with Respect to GND àààààààà
b
2.0V to
a
7.0V
(2)
Voltage on Pin RP
Y
or Pin A
9
with Respect to GND ààààà
b
2.0V to
a
13.5V
(2, 3)
V
CC
Program Voltage with
Respect to GND
during Block Erase and
Word/Byte Writeààààààààà
b
2.0V to
a
14.0V
(2, 3)
V
CC
Supply Voltage
with Respect to GND àààààààà
b
2.0V to
a
7.0V
(2)
Output Short Circuit Currentààààààààààààà100 mA
(4)
NOTICE: This is a production data sheet. The specifi-
cations are subject to change without notice.
*
WARNING: Stressing the device beyond the ‘‘Absolute
Maximum Ratings’’ may cause permanent damage.
These are stress ratings only. Operation beyond the
‘‘Operating Conditions’’ is not recommended and ex-
tended exposure beyond the ‘‘Operating Conditions’’
may affect device reliability.
OPERATING CONDITIONS
Symbol
Parameter
Notes
Min
Max
Unit
§
C
T
A
Operating Temperature
b
20
70
V
CC
V
CC
Supply Voltage
Program/Erase
3.15
3.60
V
Read
3.00
3.60
V
V
CC
V
CC
Supply Voltage
5
4.50
5.50
V
NOTES:
1. Operating temperature is for commercial product defined by this specification.
2. Minimum DC voltage is
b
0.5V on input/output pins. During transitions, this level may undershoot to
b
2.0V for periods
k
20 ns. Maximum DC voltage on input/output pins is V
CC
a
0.5V which during transitions may overshoot to V
CC
a
2.0V for periods
k
20 ns.
3. Maximum DC voltage on V
PP
may overshoot to
a
14.0V for periods
k
20 ns. Maximum DC voltage on RP
Y
or A
9
may
overshoot to 13.5V for periods
k
20 ns.
4. Output shorted for no more than one second. No more than one output shorted at a time.
5. AC specifications are valid at both voltage ranges. See DC Characteristics tables for voltage range-specific specifica-
tions.
DC CHARACTERISTICS
V
CC
e
3.3V
g
0.3V Read, 3.15V–3.6V Program/Erase
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
I
LI
Input Load Current
1
g
1.0
m
A
V
CC
e
V
CC
Max
V
IN
e
V
CC
or GND
V
CC
e
V
CC
Max
V
OUT
e
V
CC
or GND
I
LO
Output Leakage Current
1
g
10
m
A
30
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F001BN-T | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-B | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F002BL-B | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BL-T | 2-MBIT (128K x 16. 256K x 8) LOW-POWER BOOT BLOCK FLASH MEMORY FAMILY |
| 28F002BV-T | 2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F001BN-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 28F001BX-T/28F001BX-B/28F001BN-T/BN-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/28F001BX-B/28F001BN-T/BN-B |
| 28F001BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F001BX-T/B |
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