參數(shù)資料
型號: 22250
英文描述: 3.0 Volt-only Burst Mode Flash Memory Technology
中文描述: 3.0伏特,只有突發(fā)模式閃存技術(shù)
文件頁數(shù): 7/9頁
文件大?。?/td> 72K
代理商: 22250
6
3.0 Volt-only Burst Mode Technology Background
For processors that do not wish to receive wrap around data, the LBA# and a new address need
to be issued to the Flash in order to receive data from the next burst range. Wrap around data
is defined as the data after last word in the burst range, e.g. word 0, 1, and so on, after word 31
in the 32 word linear mode.
Summary
Technology leadership, experience and creativity of AMD’s engineering resources have once
again led to the arrival of the next generation of high performance flash memory devices.
These burst mode low voltage devices offer burst read access times of 18 ns, with initial
access times of 65 ns. The high performance, reduced power consumption, and industry-
leading guaranteed minimum endurance of 1,000,000 cycles combine to make this family and
ideal choice for cost-sensitive, performance-driven applications.
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