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| 型號(hào)： | 20602 |
| 英文描述： | 3.0 Volt-only Flash Memory Technology |
| 中文描述： | 3.0伏只快閃記憶體技術(shù) |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 69K |
| 代理商： | 20602 |
6
3.0 Volt-only Technology Background
High Performance
AMD’s 3.0 volt-only devices offer a choice of fast access times at an extended V
CC
voltage
range of 2.7 to 3.6 volts or faster access times at a regulated voltage range of 3.0 to 3.6 volts.
For example, AMD’s newly introduced Am29LV001B has a 45 ns speed option at the
regulated voltage range and a 55 ns speed option at the extended voltage range. The speed and
low voltage operation of the 3.0 volt-only family makes them ideal solutions for high-
performance, battery-powered applications.
The following sequence of events within the device illustrates how AMD achieves high
performance during a read operation:
1. A voltage transition that appears on the address pins initiates Address Transition
Detection (ATD) circuitry to retrieve the next byte or word of data.
2. ATD initiates charge pump circuitry to boost the voltage on the word lines from 0.0 or
3.0 volts to 5.0 volts as the device decodes the address and loads the new data from the
array into the data latches.
3. The word lines remain boosted at 5.0 volts internally only until the requested data is
latched.
4. After the data is latched, ATD reduces the voltage on the word lines to 3.0 volts, and
the data remains available from the data latches until the next read request from a dif-
ferent address.
5. If the address lines remain stable for t
ACC
+ 30 ns, the device enters the Automatic
Sleep Mode, reducing the voltage on the word lines to 0.0 volts.
Boosting the word lines only as needed provides read access times equivalent to AMD’s 5.0
volt-only Flash memories of similar density and organization. The Automatic Sleep Mode
provides additional power savings without sacrificing performance.
In program and erase modes, the 3.0 volt-only design uses an efficient power supply charge
pump design, which pumps gate voltage with low current, to reduce program and erase times.
The 3.0 volt-only devices offer this performance without compromise at V
CC
voltage levels as
low as 2.7 volts.
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