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參數(shù)資料
| 型號(hào)： | 1SV252 |
| 元件分類： | PIN二極管 |
| 英文描述： | SILICON, PIN DIODE |
| 封裝： | 1-2P1C, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 122K |
| 代理商： | 1SV252 |
1SV252
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Pin Type
1SV252
VHF~UHF Band RF Attenuator Applications
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
50
V
Forward current
IF
50
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 10 μA
50
V
Reverse current
IR
VR = 50 V
0.1
μA
Forward voltage
VF
IF = 50 mA
0.93
0.98
V
Total capacitance
(Note)
CT
VR = 50 V, f = 1 MHz
0.2
0.4
pF
Series resistance
rs
IF = 10 mA, f = 100 MHz
3.5
10
Ω
Note: CT is measured by 3 terminal method with capacitance bridge.
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
1-2P1C
Weight: 0.006 g (typ.)
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