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參數(shù)資料
| 型號： | 1SV262 |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | 35.5 pF, 34 V, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | 1-1E1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 121K |
| 代理商： | 1SV262 |
1SV262
2003-04-02
1
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV262
CATV Tuning
High capacitance ratio: C2 V/C25 V = 12.5 (typ.)
Low series resistance: rs = 0.6 (typ.)
Excellent C-V characteristics, and small tracking error.
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
34
V
Peak reverse voltage
VRM
36 (RL = 10 kW)V
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 mA
34
V
Reverse current
IR
VR = 32 V
10
nA
Capacitance
C2 V
VR = 2 V, f = 1 MHz
33
35.5
38
pF
Capacitance
C25 V
VR = 25 V, f = 1 MHz
2.6
2.85
3.0
pF
Capacitance ratio
C2 V/C25 V
12.0
12.5
Capacitance ratio
C25 V/C28 V
1.03
Series resistance
rs
VR = 5 V, f = 470 MHz
0.6
0.8
W
Note 1: Available in matched group for capacitance to 2.0%.
(min)
C
(min)
C
(max)
C
-
<= 0.02 (VR = 2~25 V)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1E1A
Weight: 0.004 g (typ.)
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