參數(shù)資料
型號: 1SMB36CAT3G*
廠商: ON SEMICONDUCTOR
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Watt Peak Power Zener Transient Voltage Suppressors
中文描述: 瓦峰值功率齊瞬態(tài)電壓抑制器
文件頁數(shù): 2/6頁
文件大?。?/td> 54K
BiDirectional TVS
I
PP
I
PP
V
I
I
R
I
T
I
T
I
R
V
RWM
V
C
V
BR
V
RWM
V
C
V
BR
1SMB10CAT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1.)
@ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
600
W
DC Power Dissipation @ T
L
= 75
°
C
Measured Zero Lead Length (Note 2.)
Derate Above 75
°
C
Thermal Resistance from JunctiontoLead
P
D
R
JL
3.0
40
25
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3.) @ T
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from JunctiontoAmbient
P
D
R
JA
0.55
4.4
226
W
mW/
°
C
°
C/W
Operating and Storage
Temperature Range
T
J
, T
stg
65 to +150
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
1. 10 X 1000 s, nonrepetitive
2. 1
square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as
shown in 403A case outline dimensions spec.
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
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