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參數(shù)資料
| 型號： | 1S2076A |
| 元件分類： | 射頻混頻器 |
| 英文描述： | MIXER DIODE, DO-35 |
| 封裝： | SC-48, 2 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 1S2076A |
1S2076A
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Value
Unit
Peak reverse voltage
V
RM
70
V
Reverse voltage
V
R
60
V
Peak forward current
I
FM
450
mA
Non-Repetitive peak forward surge current
I
FSM *1
A
Average forward current
I
O
150
mA
Power dissipation
Pd
250
mW
Junction temperature
Tj
175
°C
Storage temperature
Tstg
65 to +175
°C
Note:
Within 1s forward surge current.
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Forward voltage
V
F
0.64
0.8
V
I
F = 10 mA
Reverse current
I
R
0.1
AV
R = 30 V
Capacitance
C
3.0
pF
V
R = 1 V, f = 1 MHz
Reverse recovery time
t
rr *
8.0
ns
I
F = IR = 10 mA, Irr = 1 mA
Note:
Reverse recovery time test circuit
3k
0.1
F
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1S2076RE | SILICON, MIXER DIODE, DO-35 |
| 1S2471T-12 | 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 1S2471T-85 | 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 1S2471T-88 | 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 |
| 1S2472T-10 | 0.12 A, 55 V, SILICON, SIGNAL DIODE, DO-35 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1S2076A(TD-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 1S2076A-E | 制造商:Renesas Electronics 功能描述:70V DO2 Bulk 制造商:Renesas Electronics Corporation 功能描述:1S2076A-E |
| 1S2076-E | 制造商:Renesas Electronics 功能描述:Diode Small Signal Switching 35V 0.45A 2-Pin DO-35 Bulk 制造商:Renesas Electronics Corporation 功能描述:Diode,30V/150mA,DO-35 |
| 1S2092 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON EPTAXIAL PLANAR TYPE |
| 1S2093 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON PLANAR TYPE TRIGGER DIODE |
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