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參數(shù)資料
| 型號： | 1N755 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | 齊納二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 7.5 V, 0.417 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AA |
| 封裝： | HERMETIC SEALED, GLASS, DO-7, 2 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | 1N755 |
Silicon 500 mW Zener Diodes
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
1N746 thru 1N759A, -1, e3 and
1N4370 thru 1N4372A, -1, e3 DO-35
1N746
-
759A,
e3
1N4370-
4372A,
e3
(DO-35)
ELECTRICAL CHARACTERISTICS* @ 25oC
MAXIMUM REVERSE
CURRENT IR
@ VR = 1 VOLT
NOMINAL
ZENER
VOLTAGE
VZ @ IZT
(NOTE 2)
ZENER
TEST
CURRENT
IZT
MAXIMUM
ZENER
IMPEDANCE
ZZT @ IZT
(NOTE 3)
@25C
@+150C
MAXIMUM
ZENER
CURRENT
IZM
(NOTE 4)
TYPICAL
TEMP COEFF.
OF ZENER
VOLTAGE
αVZ
JEDEC
TYPE NO.
(NOTE1)
VOLTS
mA
OHMS
μA
mA
%/
oC
1N4370
1N4371
1N4372
2.4
2.7
3.0
20
30
29
100
75
50
200
150
100
150
135
120
-.085
-.080
-.075
1N746
1N747
1N748
3.3
3.6
3.9
20
28
24
23
10
30
110
100
95
-.066
-.058
-.046
1N749
1N750
1N751
1N752
4.3
4.7
5.1
5.6
20
22
19
17
11
2
1
30
20
85
75
70
65
-.033
-.015
+/-.010
+.030
1N753
1N754
1N755
1N756
6.2
6.8
7.5
8.2
20
7
5
6
8
.1
20
60
55
50
45
+.049
+.053
+.057
+.060
1N757
1N758
1N759
9.1
10.0
12.0
20
10
17
30
.1
20
40
35
30
+.061
+.062
* JEDEC Registered Data
NOTE 1: Standard tolerance on JEDEC types shown is +/- 10%. Suffix letter A denotes +/- 5% tolerance; suffix
letter C denotes +/- 2%; and suffix letter D denotes +/- 1% tolerance.
NOTE 2: Voltage measurements to be performed 20 seconds after application of dc test current.
NOTE 3: Zener impedance derived by superimposing on
IZT, a 60 cps, rms ac current equal to 10% IZT (2mA ac). See MicroNote 202 for
typical zener Impedance variation with different operating currents.
NOTE 4: Allowance has been made for the increase in
VZ due to ZZ and for the increase in junction temperature as the unit approaches
thermal equilibrium at the power dissipation of 400 mW.
GRAPHS
TEMPERATURE
CO
EFFICIENT
mV/
o
C
RATED
P
O
WER
DISSIPATION
-
mW
TEMPERATURE
C
O
E
FFICIENT
TL – LEAD TEMPERATURE (
oC) 3/8” FROM BODY or
NOMINAL ZENER VOLTAGE (VOLTS)
TA on FR4 PC BOARD
FIGURE 1
FIGURE 2
POWER DERATING CURVE
ZENER VOLTAGE TEMPERATURE
COEFFICIENT vs. ZENER VOLTAGE
Microsemi
Scottsdale Division
Page 2
Copyright
2005
10-18-2005 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N755 (DO-35) | 制造商:Microsemi Corporation 功能描述:ZENER VOLTAGE REGULATOR DIODE DO-35 SD - Bulk |
| 1N755-1 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:SILICON 400 mW ZENER DIODES |
| 1N755A | 功能描述:穩(wěn)壓二極管 7.5V .5W RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N755A BK | 功能描述:DIODE ZENER 7.5V 500MW DO35 制造商:central semiconductor corp 系列:- 包裝:散裝 零件狀態(tài):有效 電壓 - 齊納（標(biāo)稱值）（Vz）:7.5V 容差:±5% 功率 - 最大值:500mW 阻抗（最大值）（Zzt）:6 歐姆 不同?Vr 時(shí)的電流 - 反向漏電流:100nA @ 1V 不同 If 時(shí)的電壓 - 正向（Vf）:1.5V @ 200mA 工作溫度:-65°C ~ 200°C 安裝類型:通孔 封裝/外殼:DO-204AH，DO-35，軸向 供應(yīng)商器件封裝:DO-35 標(biāo)準(zhǔn)包裝:2,500 |
| 1N755A TR | 制造商:Central Semiconductor Corp 功能描述:7.5V .5W |
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