參數(shù)資料
型號： 1N6266
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 紅外LED
英文描述： GaAs INFRARED EMITTING DIODE
中文描述： 1 ELEMENT, INFRARED LED, 940 nm
封裝： HERMETICALLY SEALED, TO-46, 2 PIN
文件頁數(shù)： 5/7頁
文件大小： 207K
代理商： 1N6266
d
CL
IRED Seating Plane
IRED
Area "A"
Receives
Power "Pw"
SPHERE
Centered on
IRED Axis
L
Seating Plane
2
N
= A/d
2
=
2
H
(I - COS
)
Steradians
I
e
= Pw/
N
mW/Steradians
H = Pw/A = I
e
/d
2
mW/cm
2
1N6266
GaAs INFRARED EMITTING DIODE
.001
.002
.004 .006
.01
1
2
1
3
1
4
1
5
1
7
1
10
1
15
1
20
1
60
1
45
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
.02
.04 .06.08 .1
.6 .8 1.0
Steradians -
N
Degrees -
Normalized to:
I = .01 Steradians
N
TA = 25
C
N
= A
r
2
2
N
= 2
H
(I - COS
)
r
I
F
Fig.8 Intensity and Power vs. Angle l
e
/
N
AREA A
TYPICAL CHARACTERISTICS
MATCHING A PHOTOTRANSISTOR WITH 1N6266
Assume a system requiring a 10 mA I
L
at an IRED to detector spacing of 2 cm (seating plane to seating plane), with
bias conditions at specification points.
Given: d
1
= 2 cm, I
L
= 10 mA min.; I
e
= 25 mW/Steradian
Then: H
1
I
e
/d
12
= 25/(2)
2
= 6.25 mW/cm
2
Detector Evaluation:
I
L
MIN
@
TYPE
mA
L14G1
1
L14G2
0.5
Calculated I
L
@ d
1
is:
L14G1 (S) H
1
= (2) 6.25 = 12.5 mA
L14G2 (S) H
1
= (1) 6.25 = 6.25 mA
Since the system requires an I
L
of 10 mA minimum the correct device to use is the L14G1.
H (GaAs)
mW/cm
2
0.5
0.5
S(GaAs)
mA/mw/cm
2
2
1
DS300278
3/12/01
5 OF 7
www.fairchildsemi.com
IRED RADIANT INTENSITY SPECIFICATION CONCEPT
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N6266 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO
1N6266_Q 功能描述:紅外發(fā)射源 25mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
1N6267 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:TRANSZORB Transient Voltage Suppressors
1N6267/1 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 6.8V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
1N6267/4 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 6.8V Unidirect RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C
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