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參數(shù)資料
| 型號： | 1N6266 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs INFRARED EMITTING DIODE |
| 中文描述： | 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | HERMETICALLY SEALED, TO-46, 2 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 207K |
| 代理商： | 1N6266 |
1N6266
GaAs INFRARED EMITTING DIODE
INFRARED EMITTING DIODE RADIANT INTENSITY
The design of an Infrared Emitting Diode (IRED)-photode-
tector system normally requires the designer to determine
the minimum amount of infrared irradiance received by the
photodetector, which then allows definition of the photode-
tector current. Prior to the introduction of the 1N6266, the
best method of estimating the photodetector received
infrared was to geometrically proportion the piecewise inte-
gration of the typical beam pattern with the specified mini-
mum total power output of the IRED. However, due to
inconsistencies of the IRED integral lenses and the beam
lobes, this procedure will not provide a valid estimation.
The 1N6266 now provides the designer specifications
which precisely define the infrared beam along the device
’
s
mechanical axis. The 1N6266 is a premium device select-
ed to give a minimum radiant intensity of 25 mW/steradian
into the 0.01 steradians referenced by the the device
’
s
mechanical axis and seating plane. Radiant intensity is the
IRED beam power output, within a specified solid angle,
per unit solid angle.
A quick review of geometry indicates that a steradian is a
unit of solid angle, referenced to the center of a sphere,
defined by 4
H
times the ratio of the area projected by the
solid angle to the area of the sphere. The solid angle is
equal to the projected area divided by the squared radius.
Steradians = 4
H
A/4
H
R
2
= A/R
2
=
N
As the projected area has a circular periphery, a geometric
integration will solve to show the relationship of the
Cartesian angle (
) of the cone, (from the center of the
sphere) to the projected area.
N
= 2
H
(1 - COS
)
2
Radiant intensity provides an easy, accurate tool to calcu-
late the infrared power received by a photodetector locat-
ed on the IRED axis. As the devices are selected for
beam characteristics, the calculated results are valid for
worst case analysis. For many applications a simple
approximation for photodetector irradiance is:
H
Ie/d
2
, in mw/cm
2
where d is the distance from the IRED to the detector in
cm.
IRED power output, and therefore Ie, depends on IRED
current. This variation ( I
e
/ I) is documented in Figure 3,
and completes the approximation: H = I
e
/d
2
( I
e
/ I). This
normally gives a conservative value of irradiance. For
more accurate results, the effect of precise angle viewed
by the detector must be considered. This is documented
in figure 8 ( I
e
/
N
) giving:
H = I
e
/d
2
( I
e
/
N
) in mw/cm
2
For worst case designs, temperature coefficients and tol-
erances must be considered.
The minimum output current of the detector (I
L
) can be
determined for a given distance (d) of the detector from
the IRED.
I
L
= (S)H
(S) I
e
/d
2
or
I
L
= (S)H = (S) (I
e
/d
2
) ( I
e
/
N
) ( I
e
/ I)
where S is the sensitivity of the detector in terms of out-
put current per unit irradiance from a GaAs source.
www.fairchildsemi.com
4 OF 7
3/12/01
DS300278
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N6266 | 制造商:Fairchild Semiconductor Corporation 功能描述:INFRARED LED ROHS COMPLIANT:NO |
| 1N6266_Q | 功能描述:紅外發(fā)射源 25mW 1.7V IR LED RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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| 1N6267/1 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 1500W 6.8V 10% Uni RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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