- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366161 > 1N5822G (ON SEMICONDUCTOR) Axial Lead Rectifiers PDF資料下載
參數(shù)資料
| 型號： | 1N5822G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Axial Lead Rectifiers |
| 中文描述： | 3 A, 40 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 封裝： | LEAD FREE, PLASTIC, CASE 267-05, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 103K |
| 代理商： | 1N5822G |
1N5820, 1N5821, 1N5822
http://onsemi.com
4
NOTE 3 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal
runaway must be considered when operating this rectifier at
reverse voltages above 0.1 V
RWM
. Proper derating may be
accomplished by use of equation (1).
T
A(max)
= T
J(max)
R
JA
P
F(AV)
where T
A(max)
= Maximum allowable ambient temperature
T
J(max)
= Maximum allowable junction temperature
(125
°
C or the temperature at which thermal
runaway occurs, whichever is lowest)
P
F(AV)
= Average forward power dissipation
P
R(AV)
= Average reverse power dissipation
R
JA
= Junctiontoambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by
taking reverse power dissipation and thermal runaway into
consideration. The figures solve for a reference temperature
as determined by equation (2).
T
R
= T
J(max)
R
JA
P
R(AV)
R
JA
P
R(AV)
(1)
(2)
Substituting equation (2) into equation (1) yields:
T
A(max)
= T
R
R
JA
P
F(AV)
Inspection of equations (2) and (3) reveals that T
R
is the
ambient temperature at which thermal runaway occurs or
where T
J
= 125
°
C, when forward power is zero. The
transition from one boundary condition to the other is
evident on the curves of Figures 1, 2, and 3 as a difference
in the rate of change of the slope in the vicinity of 115
°
C. The
data of Figures 1, 2, and 3 is based upon dc conditions. For
(3)
use in common rectifier circuits, Table 1 indicates suggested
factors for an equivalent dc voltage to use for conservative
design, that is:
V
R(equiv)
= V
(FM)
F
The factor F is derived by considering the properties of the
various rectifier circuits and the reverse characteristics of
Schottky diodes.
EXAMPLE: Find T
A(max)
for 1N5821 operated in a
12volt dc supply using a bridge circuit with capacitive filter
such that I
DC
= 2.0 A (I
F(AV)
= 1.0 A), I
(FM)
/I
(AV)
= 10, Input
Voltage = 10 V
(rms)
, R
JA
=
40
°
C/W.
Step 1. Find V
R(equiv).
Read F = 0.65 from Table 1,
V
R(equiv)
= (1.41) (10) (0.65) = 9.2 V.
Step 2. Find T
R
from Figure 2. Read T
R
= 108
°
C
@ V
R
= 9.2 V and R
JA
= 40
°
C/W.
Step 3. Find P
F(AV)
from Figure 6. **Read P
F(AV)
= 0.85 W
@I(FM)
I(AV)
Step 4. Find T
A(max)
from equation (3).
T
A(max)
= 108
**Values given are for the 1N5821. Power is slightly lower
for the 1N5820 because of its lower forward voltage, and
higher for the 1N5822. Variations will be similar for the
MBRprefix devices, using P
F(AV)
from Figure 6.
(4)
10and IF(AV)
1.0 A.
(0.85) (40) = 74
°
C.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Full Wave,
Center Tapped
*
Load
Resistive
Capacitive*
Resistive
Capacitive
Resistive
Capacitive
Sine Wave
0.5
1.3
0.5
0.65
1.0
1.3
Square Wave
0.75
1.5
0.75
0.75
1.5
1.5
*Note that V
R(PK)
Use line to center tap voltage for V
in.
2.0 V
in(PK)
.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5822RLG | Axial Lead Rectifiers |
| 1N5920B | Zener Voltage Regulator Diode(6.2V齊納電壓，齊納穩(wěn)壓二極管) |
| 1N5914B | Zener Voltage Regulator Diode(3.6V齊納電壓，齊納穩(wěn)壓二極管) |
| 1N5917B | Zener Voltage Regulator Diode(4.7V齊納電壓，齊納穩(wěn)壓二極管) |
| 1N5919B | Zener Voltage Regulator Diode(5.6V齊納電壓，齊納穩(wěn)壓二極管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5822-G | 制造商:COMCHIP 制造商全稱:Comchip Technology 功能描述:Schottky Barrier Rectifier |
| 1N5822G | 制造商:ON Semiconductor 功能描述:Schottky Rectifier |
| 1N5822H | 制造商:PANJIT 制造商全稱:Pan Jit International Inc. 功能描述:SCHOTTKY BARRIER RECTIFIERS |
| 1N5822HA0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽車級，AEC-Q101 包裝:帶盒（TB） 零件狀態(tài):在售 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:40V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf:525mV @ 3A 速度:快速恢復(fù) = 200mA（Io） 不同?Vr 時的電流 - 反向漏電流:500μA @ 40V 不同?Vr，F(xiàn) 時的電容:200pF @ 4V，1MHz 安裝類型:通孔 封裝/外殼:DO-201AD，軸向 供應(yīng)商器件封裝:DO-201AD 工作溫度 - 結(jié):-55°C ~ 125°C 標準包裝:500 |
| 1N5822HB0G | 功能描述:DIODE SCHOTTKY 40V 3A DO201AD 制造商:taiwan semiconductor corporation 系列:汽車級，AEC-Q101 包裝:散裝 零件狀態(tài):在售 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:40V 電流 - 平均整流（Io）:3A 不同 If 時的電壓 - 正向（Vf:525mV @ 3A 速度:快速恢復(fù) = 200mA（Io） 不同?Vr 時的電流 - 反向漏電流:500μA @ 40V 不同?Vr，F(xiàn) 時的電容:200pF @ 4V，1MHz 安裝類型:通孔 封裝/外殼:DO-201AD，軸向 供應(yīng)商器件封裝:DO-201AD 工作溫度 - 結(jié):-55°C ~ 125°C 標準包裝:500 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。