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參數(shù)資料
| 型號： | 1N5818RL |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 1N5818RL |
1N581x
2/5
Symbol
Parameter
Tests Conditions
1N5817 1N5818 1N5819
Unit
IR *
Reverse leakage
current
Tj = 25°C
VR =VRRM
0.5
mA
Tj = 100°C
10
mA
VF *
Forward voltage drop
Tj = 25
°CIF =1 A
0.45
0.50
0.55
V
Tj=25
°CIF =3 A
0.75
0.80
0.85
V
Pulse test : * tp = 380
s, δ <2%
To evaluate the conduction losses use the following equations :
P=0.3xIF(AV) + 0.090 IF
2
(RMS ) for 1N5817 / 1N5818
P=0.3xIF(AV) + 0.150 IF
2
(RMS ) for 1N5819
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
Lead length = 10 mm
100
°C/W
Rth (j-l)
Junction to lead
Lead length = 10 mm
45
°C/W
THERMAL RESISTANCES
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
PF(av)(W)
IF(av) (A)
T
δ=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 1: Average forward power dissipation versus
average forward current (1N5817/1N5818).
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
PF(av)(W)
IF(av) (A)
T
δ=tp/T
tp
δ = 0.2
δ = 0.5
δ = 1
δ = 0.05
δ = 0.1
Fig. 2: Average forward power dissipation versus
average forward current (1N5819).
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IF(av)(A)
Tamb(°C)
T
δ=tp/T
tp
Rth(j-a)=100°C/W
Rth(j-a)=Rth(j-l)=45°C/W
Fig. 2-1: Average forward current versus ambient
temperature (
δ=0.5) (1N5817/1N5818).
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IF(av)(A)
Tamb(°C)
T
δ=tp/T
tp
Rth(j-a)=100°C/W
Rth(j-a)=Rth(j-l)=45°C/W
Fig. 2-2: Average forward current versus ambient
temperature (
δ=0.5) (1N5819).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N5819RL | 1 A, 40 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5818 | 1 A, 30 V, SILICON, SIGNAL DIODE, DO-41 |
| 1N5819-1S | 1 A, SILICON, SIGNAL DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N5818RLG | 功能描述:肖特基二極管與整流器 1A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5818S | 制造商:SY 制造商全稱:SY 功能描述:SCHOTTKY BARRIER RECTIFIER |
| 1N5818SF | 制造商:GXELECTRONICS 制造商全稱:Gaomi Xinghe Electronics Co., Ltd. 功能描述:SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere |
| 1N5818-T | 功能描述:肖特基二極管與整流器 Vr/30V Io/1A T/R RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| 1N5818-T/R | 制造商:Micro Commercial Components (MCC) 功能描述:Diode Schottky 30V 1A 2-Pin DO-41 T/R |
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