參數(shù)資料
型號(hào): 1N5636AB
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
封裝: HERMETIC SEALED, METAL PACKAGE-2
文件頁數(shù): 4/4頁
文件大?。?/td> 212K
代理商: 1N5636AB
Silicon Avalanche Diodes
316
www .littelfuse .com
1N5647
1N5647A
1N5648
1N5648A
1N5649*
1N5649A*
1N5650
1N5650A
1N5651
1N5651A
1N5652
1N5652A
1N5653
1N5653A
1N5654
1N5654A
1N5655*
1N5655A*
1N5656*
1N5656A*
1N5657
1N5657A
1N5658
1N5658A
1N5659
1N5659A
1N5660*
1N5660A*
1N5661
1N5661A
1N5662
1N5662A
1N5663
1N5663A
1N5664
1N5664A
1N5665
1N5665A
Part
Number
Reverse
Stand Off
Voltage
VR
(Volts)
31.60
33.30
34.80
36.80
38.10
40.20
41.30
43.60
45.4
47.8
50.2
53.0
55.1
58.1
60.7
64.1
66.4
70.1
73.7
77.8
81.0
85.5
89.2
94.0
97.2
102.0
105.0
111.0
121.0
128.0
130.0
136.0
138.0
145.0
146.0
154.0
162.0
171.0
Breakdown
Voltage
VBR (Volts) @ IT
MIN
35.10
37.10
38.70
40.90
42.30
44.70
45.90
48.50
50.4
53.2
55.8
58.9
61.2
64.6
67.5
71.3
73.8
77.9
81.9
86.5
90.0
95.0
99.0
105.0
108.0
114.0
117.0
124.0
135.0
143.0
144.0
152.0
153.0
162.0
171.0
180.0
190.0
MAX
42.90
41.00
47.30
45.20
51.70
49.40
56.10
53.60
61.6
58.8
68.2
65.1
74.8
71.4
82.5
78.8
90.2
86.1
100.0
95.5
110.0
105.0
121.0
116.0
132.0
126.0
143.0
137.0
165.0
158.0
176.0
168.0
187.0
179.0
198.0
189.0
220.0
210.0
(mA)
1.0
Maximum
Reverse
Leakage
IR @ VR
(A)
5.0
Maximum
Clamping
Voltage
VC @ IPP
(Volts)
56.4
53.9
61.9
59.3
67.8
64.8
73.5
70.1
80.5
77.0
89.0
85.0
98.0
92.0
108.0
103.0
118.0
113.0
131.0
125.0
144.0
137.0
158.0
152.0
173.0
165.0
187.0
179.0
215.0
207.0
230.0
219.0
244.0
234.0
258.0
246.0
287.0
274.0
Maximum
Peak Pulse
Current
IPP
(A)
26.5
28.0
24.0
25.3
22.2
23.2
20.4
21.4
18.6
19.5
16.9
17.7
15.3
16.3
13.9
14.6
12.7
13.3
11.4
12.0
10.4
11.0
9.5
9.9
8.7
9.1
8.0
8.4
7.0
7.2
6.5
6.8
6.2
6.4
5.8
6.1
5.2
5.5
Max
Voltage
Temperature
Variation
of VBR (mV/°C)
39.0
36.0
46.0
44.0
50.0
48.0
55.0
51.0
58.0
56.0
65.0
62.0
71.0
69.0
80.0
76.0
90.0
86.0
99.0
94.0
109.0
104.0
120.0
115.0
131.0
125.0
142.0
136.0
164.0
157.0
175.0
167.0
186.0
188.0
197.0
188.0
219.0
209.0
Suffix ‘A’ denotes 5% tolerance device, no suffix denotes a 10% tolerance device.
1N5629 to 1N5647A VF max = 3.5V at IF = 50A 300 S square wave pulse.
1N5648 to 1N5665A VF max = 5.0V at IF = 50A 300 S square wave pulse.
* Preferred voltages.
1N56 Series
ELECTRICAL SPECIFICATION @ Tamb 25°C
1500 Watt Metal Axial Leaded Transient Voltage Suppressors
相關(guān)PDF資料
PDF描述
1N5637AB 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
1N5638AB 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
1N5639AB 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
1N5639B 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
1N5642AB 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-13
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
1N5637 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 12.1V 1.5KW 2PIN DO-13 - Bulk
1N5637A 制造商:Microsemi Corporation 功能描述:DO-13 SD - Bulk 制造商:Microsemi 功能描述:Microsemi 1N5637A TVS
1N5637A/TR 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:帶卷(TR) 零件狀態(tài):在售 類型:齊納 單向通道:1 電壓 - 反向關(guān)態(tài)(典型值):12.8V 電壓 - 擊穿(最小值):14.3V 電壓 - 箝位(最大值)@ Ipp:21.2V 電流 - 峰值脈沖(10/1000μs):71A 功率 - 峰值脈沖:1500W(1.5kW) 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:- 工作溫度:-65°C ~ 175°C(TA) 安裝類型:通孔 封裝/外殼:DO-13 供應(yīng)商器件封裝:DO-13(DO-202AA) 標(biāo)準(zhǔn)包裝:100
1N5637AE3 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:散裝 零件狀態(tài):在售 類型:齊納 單向通道:1 電壓 - 反向關(guān)態(tài)(典型值):12.8V 電壓 - 擊穿(最小值):14.3V 電壓 - 箝位(最大值)@ Ipp:21.2V 電流 - 峰值脈沖(10/1000μs):71A 功率 - 峰值脈沖:1500W(1.5kW) 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:- 工作溫度:-65°C ~ 175°C(TA) 安裝類型:通孔 封裝/外殼:DO-13 供應(yīng)商器件封裝:DO-13(DO-202AA) 標(biāo)準(zhǔn)包裝:100
1N5637AE3/TR 功能描述:UNI-DIRECTIONAL TVS 制造商:microsemi corporation 系列:- 包裝:帶卷(TR) 零件狀態(tài):在售 類型:齊納 單向通道:1 電壓 - 反向關(guān)態(tài)(典型值):12.8V 電壓 - 擊穿(最小值):14.3V 電壓 - 箝位(最大值)@ Ipp:21.2V 電流 - 峰值脈沖(10/1000μs):71A 功率 - 峰值脈沖:1500W(1.5kW) 電源線路保護(hù):無 應(yīng)用:通用 不同頻率時(shí)的電容:- 工作溫度:-65°C ~ 175°C(TA) 安裝類型:通孔 封裝/外殼:DO-13 供應(yīng)商器件封裝:DO-13(DO-202AA) 標(biāo)準(zhǔn)包裝:100