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參數(shù)資料
| 型號(hào)： | 1N4755AB |
| 元件分類： | 齊納二極管 |
| 英文描述： | 43 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | 1N4755AB |
PAGE . 3
March 18,2011-REV.06
1N4736A~1N4757A
NOTE:
1. Tolerance and Type Number Designation. The type umbers listed have a standard tolerance on the nominal zener
voltage of
5%
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3. Zener Voltage (Vz) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining
the lead temperature (T ) at 30 C
1 C, from the diode body.
4. Zener Impedance (Zz) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when
an ac current having an rms value equal to 10% of the dc zener current (Izt or Izk) is superimposed on Izt or Izk.
5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak,
non-repetitive, reverse surge current of 1/2
+
L
oo
1.0
0.75
0.5
0.25
0
20
40
60
80
1
111
2
0
2
468
0
000
0
T , LEAD TEMPERATURE ( C)
L
O
P
,MAXIMUM
POWER
DISSIP
ATION
(W
ATTS)
D
RATING AND CHARACTERISTICS CURVES
FIGURE.1 POWER TEMPERATURE DERATING CURVE
FIGURE.2 TEMPERATURE COEFICIENTS
(-55 C TO +150 C TEMPERATURE RANGE; 90% OF THE UNITS ARE IN THE RANGES INDICATED.)
OO
a.RAMGE FOR UNITS TO 12 VOLTS
b.RAMGE FOR UNITS 12 TO 51 VOLTS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 1N4755AT/B | 43 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N4756AB | 47 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N4756A | 47 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N4740A-G | 10 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
| 1N4743A-G | 13 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 1N4755A-B | 功能描述:穩(wěn)壓二極管 1.0W 43V 5% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| 1N4755AE3/TR13 | 制造商:Microsemi Corporation 功能描述:1.0W, VZ = 43V, ? 5% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 1.0W 43V 5% DO41 |
| 1N4755A-G _AY _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4755A-G_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| 1N4755AHA0G | 功能描述:DIODE ZENER 43V 1W DO204AL 制造商:taiwan semiconductor corporation 系列:汽車級(jí)，AEC-Q101 包裝:帶盒（TB） 零件狀態(tài):在售 電壓 - 齊納（標(biāo)稱值）（Vz）:43V 容差:±5% 功率 - 最大值:1W 阻抗（最大值）（Zzt）:70 Ohms 不同?Vr 時(shí)的電流 - 反向漏電流:5μA @ 32.7V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:DO-204AL，DO-41，軸向 供應(yīng)商器件封裝:DO-204AL（DO-41） 標(biāo)準(zhǔn)包裝:3,000 |
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