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參數(shù)資料
| 型號(hào)： | 150GT120DN2 |
| 英文描述： | Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 7/9頁 |
| 文件大?。?/td> | 302K |
| 代理商： | 150GT120DN2 |
7
Nov-24-1997
BSM 150 GT 120 DN2
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6
0
50
100 150 200 250 300
A
400
I
C
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 150 A
0
10
20
30
40
60
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 5.6
0
50
100 150 200 250 300
A
400
I
C
0
20
40
60
80
mWs
120
E
Eon
Eoff
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600V, VGE = ± 15 V, IC = 150 A
0
10
20
30
40
60
R
G
0
20
40
60
80
mWs
120
E
Eon
Eoff
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